Thickness uniformity and electrical properties of ultrathin gate oxides grown in N2O ambient by rapid thermal processing

1992 ◽  
Vol 72 (12) ◽  
pp. 5706-5710 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Ahn ◽  
D. L. Kwong
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxides ◽  
Thickness Uniformity

Electrical properties of composite gate oxides formed by rapid thermal processing

1996 ◽  
Vol 43 (4) ◽  
pp. 636-646 ◽  
Author(s):  
V. Misra ◽  
W.K. Henson ◽  
E.M. Vogel ◽  
G.A. Hames ◽  
P.K. McLarty ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxides

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing

1999 ◽  
Author(s):  
Y. B. Jia ◽  
Ohm G. Pan ◽  
Long-Ching Wang ◽  
Patrick Lo ◽  
Shih-Ked Lee ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxides
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