The microstructure and electrical properties of contacts formed in the Ti/Al/Si system due to rapid thermal processing

1990 ◽  
Vol 67 (6) ◽  
pp. 3003-3010 ◽  
Author(s):  
Y. Komem ◽  
A. Katz
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Thin Nitride Films: Pushing the Limits Using Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
S. J. DeBoer ◽  
R. P. S. Thakur
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Thermal Processing ◽  
Dielectric Material ◽  
Rapid Thermal Processing ◽  
Semiconductor Processing ◽  
Nucleation Behavior ◽  
Silicon Nitride Films ◽  
Current Reduction ◽  
Almost All

AbstractSilicon nitride, a celebrated dielectric material in semiconductor processing, is used extensively in almost all of today's key technologies (DRAM, microprocessor, SRAM, Flash memories, etc.). The physical and electrical properties of this material are well understood, and integration of silicon nitride in a given process is simple. As a result of these benefits, alternate dielectric material technologies have found limited acceptance. As feature sizes shrink, the formation of reliable thin nitride films is critical and the performance of these nitride films is very dependent on the technology used for their preparation. In this paper, we show that an incremental and overall improvement in the physical and electrical properties of nitride films can be attained by using rapid thermal processing technology.We present the nucleation behavior of the <100 Å nitride films on polysilicon surfaces. We investigate the integrity of these films as a function of predeposition environment and discuss the oxidation and punch-through resistance of cluster tool-deposited films. The results of our studies of the conduction mechanism in thin silicon nitride films and scaling limits for these films are shown. We also discuss the structural and electrical changes these films undergo during the subsequent reoxidation process performed for leakage current reduction.

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