Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures

1992 ◽  
Vol 39 (3) ◽  
pp. 598-606 ◽  
Author(s):  
C.A. Dimitriadis ◽  
P.A. Coxon ◽  
L. Dozsa ◽  
L. Papadimitriou ◽  
N. Economou
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Polysilicon Films

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

1997 ◽  
Vol 471 ◽  
Author(s):  
K. Mourgues ◽  
F. Raoult ◽  
L. Pichon ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
The Difference

ABSTRACTLow Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed.The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films.The best electrical properties are obtained with the B type TFTs: a low threshold voltage (VT=1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (107) for a drain voltage VDS= 1V, and a very high field effect mobility (≥100 cm2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.

Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition

1997 ◽  
Vol 144 (4) ◽  
pp. 1423-1429 ◽  
Author(s):  
Zhiguo Meng ◽  
Zhonghe Jin ◽  
Bhat A. Gururaj ◽  
Paul Chu ◽  
Hoi S. Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Thin Film Formation

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

Synthesis of Cs2SnI6 perovskite thin film by low-pressure chemical vapor deposition method

2021 ◽  
pp. 138799
Author(s):  
Phung Dinh Hoat ◽  
Hwi-Hon Ha ◽  
Pham Tien Hung ◽  
Vu Xuan Hien ◽  
Sangwook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Pressure Chemical

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1855-1862 ◽  
Author(s):  
H. Kahn ◽  
R. Ballarini ◽  
A. H. Heuer
Keyword(s):  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystal Substrate ◽  
Pressure Chemical ◽  
Polysilicon Films

Polysilicon films were deposited using low-pressure chemical vapor deposition (LPCVD) onto oxidized silicon substrates, after which substrate curvature as a function of temperature was measured. The curvatures changed with temperature, implying that the thermal expansion of LPCVD polysilicon differs from that of the single crystal silicon substrate. Further, polysilicon films with tensile residual stresses displayed an increased thermal expansion, while polysilicon films with compressive residual stresses displayed a decreased thermal expansion. Following high temperature annealing, the residual stresses of the polysilicon films were reduced to near zero, and the thermal expansion of the polysilicon films matched that of the single crystal substrate. The apparent change in thermal expansion coefficient due to residual stress was much larger than predicted theoretically.

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