1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps

M.-H. Tsai; T.-P. Ma

doi:10.1109/55.215185

1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps

IEEE Electron Device Letters ◽

10.1109/55.215185 ◽

1993 ◽

Vol 14 (5) ◽

pp. 256-258 ◽

Cited By ~ 34

Author(s):

M.-H. Tsai ◽

T.-P. Ma

Keyword(s):

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in MOSFETs

IEEE Electron Device Letters ◽

10.1109/led.2003.822653 ◽

2004 ◽

Vol 25 (2) ◽

pp. 98-100 ◽

Cited By ~ 2

Author(s):

C.-Y. Lu ◽

K.-S. Chang-Liao

Keyword(s):

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors: Oxide charge versus interface traps

Journal of Applied Physics ◽

10.1063/1.342548 ◽

1989 ◽

Vol 65 (1) ◽

pp. 354-360 ◽

Cited By ~ 43

Author(s):

Jeong Yeol Choi ◽

Ping Keung Ko ◽

Chenming Hu ◽

William F. Scott

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.658688 ◽

1998 ◽

Vol 45 (2) ◽

pp. 512-520 ◽

Cited By ~ 93

Author(s):

Chun Chen ◽

Tso-Ping Ma

Keyword(s):

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Lateral distribution of hot-carrier-induced oxide charge and interface traps in MOSFET's

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers ◽

10.1109/vtsa.1991.246683 ◽

2002 ◽

Author(s):

W. Chen ◽

A. Balasinski ◽

T.-P. Ma

Keyword(s):

Lateral Distribution ◽

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping

2020 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps45951.2020.9129513 ◽

2020 ◽

Cited By ~ 1

Author(s):

Bernhard Ruch ◽

Gregor Pobegen ◽

Christian Schleich ◽

Tibor Grasser

Keyword(s):

Interface Traps ◽

Charge Pumping ◽

Hot Carrier

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Two types of interface traps induced by hot-carrier stressing in MOSFETs

Solid-State Electronics ◽

10.1016/0038-1101(93)90019-m ◽

1993 ◽

Vol 36 (6) ◽

pp. 936-938

Author(s):

N.C. Das ◽

V. Nathan

Keyword(s):

Interface Traps ◽

Hot Carrier

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Positive oxide-charge generation during 0.25 /spl mu/m PMOSFET hot-carrier degradation

IEEE Electron Device Letters ◽

10.1109/55.320990 ◽

1994 ◽

Vol 15 (10) ◽

pp. 427-429 ◽

Cited By ~ 11

Author(s):

R. Woltjer ◽

G.M. Paulzen ◽

H. Lifka ◽

P. Woerlee

Keyword(s):

Charge Generation ◽

Oxide Charge ◽

Hot Carrier ◽

Hot Carrier Degradation

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.8796 ◽

1988 ◽

Vol 35 (12) ◽

pp. 2221-2228 ◽

Cited By ~ 144

Author(s):

M.G. Ancona ◽

N.S. Saks ◽

D. McCarthy

Keyword(s):

Lateral Distribution ◽

Interface Traps ◽

Hot Carrier

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Effects of interface traps and bulk traps in SiO/sub 2/ on hot-carrier-induced degradation

Proceedings of the 1989 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1989.39292 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Uchida ◽

S. Inomata ◽

T. Ajioka

Keyword(s):

Interface Traps ◽

Hot Carrier

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