IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

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IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 mu m

IEEE Electron Device Letters ◽

10.1109/55.62974 ◽

1990 ◽

Vol 11 (9) ◽

pp. 415-417 ◽

Cited By ~ 35

Author(s):

B.-Y. Tsaur ◽

C.K. Chen ◽

B.A. Nechay

Keyword(s):

Schottky Barrier ◽

Infrared Detectors

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Silicide/Si/sub 1-x/Ge/sub x/ Schottky-barrier long-wavelength infrared detectors

International Technical Digest on Electron Devices Meeting ◽

10.1109/iedm.1992.307324 ◽

1992 ◽

Cited By ~ 1

Author(s):

Xiao ◽

Sturm ◽

Parihar ◽

Lyon ◽

Meyerhofer ◽

...

Keyword(s):

Schottky Barrier ◽

Infrared Detectors ◽

Long Wavelength ◽

Long Wavelength Infrared

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Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical response on wavelength and polarization

Applied Physics Letters ◽

10.1063/1.113042 ◽

1994 ◽

Vol 65 (16) ◽

pp. 1986-1988 ◽

Cited By ~ 1

Author(s):

K. Kapser ◽

P. P. Deimel ◽

W. Platz ◽

U. Prechtel

Keyword(s):

Schottky Barrier ◽

Infrared Detectors ◽

Optical Response

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CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime

10.1117/12.218186 ◽

1995 ◽

Cited By ~ 1

Author(s):

Sabine Kolodinski ◽

Ricardo A. Donaton ◽

Elisenda Roca ◽

Matty Caymax ◽

Karen Maex

Keyword(s):

Schottky Barrier ◽

Infrared Detectors

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New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Advances in OptoElectronics ◽

10.1155/2011/459130 ◽

2011 ◽

Vol 2011 ◽

pp. 1-6 ◽

Cited By ~ 1

Author(s):

V. G. Ivanov ◽

G. V. Ivanov

Keyword(s):

Schottky Barrier ◽

Thermionic Emission ◽

Radiation Energy ◽

Substantial Improvement ◽

Semiconductor Diode ◽

Cutoff Wavelength ◽

Hot Electron ◽

Gas Emission ◽

Ir Detector ◽

New Type

The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED) take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB) as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

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