The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors

I.R.C. Post; P. Ashburn

doi:10.1109/55.192774

The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.192774 ◽

1992 ◽

Vol 13 (8) ◽

pp. 408-410 ◽

Cited By ~ 1

Author(s):

I.R.C. Post ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Base Current ◽

Polysilicon Emitter

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Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

Electronics Letters ◽

10.1049/el:19990479 ◽

1999 ◽

Vol 35 (9) ◽

pp. 752 ◽

Cited By ~ 2

Author(s):

J. Schiz ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Base Current ◽

Polysilicon Emitter

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Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

10.1117/12.186749 ◽

1994 ◽

Author(s):

David Quon ◽

Yang H. Chang ◽

Gregory J. Sonek ◽

Guann-pyng Li

Keyword(s):

Noise Analysis ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Base Current ◽

Polysilicon Emitter

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On the noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise

Solid-State Electronics ◽

10.1016/s0038-1101(96)00177-3 ◽

1997 ◽

Vol 41 (3) ◽

pp. 441-445 ◽

Cited By ~ 8

Author(s):

H.A.W Markus ◽

Ph Roche ◽

T.G.M Kleinpenning

Keyword(s):

Series Resistance ◽

Bipolar Transistors ◽

Current Noise ◽

Base Current ◽

Resistance Noise ◽

Polysilicon Emitter

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Improved base current ideality in polysilicon emitter bipolar transistors by fluorine implantation

10.1049/ic:19950179 ◽

1995 ◽

Author(s):

N.E. Moiseiwitsch

Keyword(s):

Bipolar Transistors ◽

Base Current ◽

Polysilicon Emitter

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A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Solid-State Electronics ◽

10.1016/s0038-1101(98)00131-2 ◽

1998 ◽

Vol 42 (9) ◽

pp. 1679-1687 ◽

Cited By ~ 8

Author(s):

E. Simoen ◽

S. Decoutere ◽

C. Claeys ◽

L. Deferm

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Base Current ◽

Hot Carrier Stress ◽

Before And After ◽

Polysilicon Emitter

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On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174936 ◽

2003 ◽

Author(s):

S.R. Sheng ◽

S.P. McAlister ◽

C. Storey ◽

L.-S. Lee ◽

H.P. Hwang

Keyword(s):

Bipolar Transistors ◽

Hot Carrier ◽

Temperature Bias ◽

Degradation Temperature ◽

Dc Characteristics ◽

Polysilicon Emitter

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Analytical modeling of oxide breakup effect on base current in n/sup +/-polysilicon emitter bipolar devices

IEEE Transactions on Electron Devices ◽

10.1109/16.168726 ◽

1992 ◽

Vol 39 (12) ◽

pp. 2797-2802 ◽

Cited By ~ 6

Author(s):

J.J. Sung ◽

T.M. Liu ◽

Y.O. Kim ◽

T.-Y. Chiu

Keyword(s):

Analytical Modeling ◽

Base Current ◽

Bipolar Devices ◽

Polysilicon Emitter

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Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3097695 ◽

2021 ◽

pp. 1-6

Author(s):

Peijian Zhang ◽

Zicheng Xu ◽

Tao Wang ◽

Wensuo Chen ◽

Min Hong ◽

...

Keyword(s):

Bipolar Transistors ◽

Time Dependent ◽

High Current ◽

Combined Stress ◽

Hot Carrier ◽

Polysilicon Emitter ◽

Hot Carrier Degradation

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An investigation of the tradeoff between enhanced gain and base doping in polysilicon emitter bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22286 ◽

1985 ◽

Vol 32 (11) ◽

pp. 2399-2407 ◽

Cited By ~ 15

Author(s):

A. Cuthbertson ◽

P. Ashburn

Keyword(s):

Bipolar Transistors ◽

Polysilicon Emitter ◽

Base Doping

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Minority Carrier Transport and Emitter Transit Time in Polysilicon Emitter Bipolar Transistors

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664562 ◽

2005 ◽

Author(s):

Y.C. Luo ◽

S.J. Wang

Keyword(s):

Transit Time ◽

Carrier Transport ◽

Minority Carrier ◽

Bipolar Transistors ◽

Polysilicon Emitter

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