Thin-oxide damage from gate charging during plasma processing

1992 ◽  
Vol 13 (5) ◽  
pp. 288-290 ◽  
Author(s):  
S. Fang ◽  
J.P. McVittie
Keyword(s):  
Plasma Processing ◽  
Thin Oxide ◽  
Oxide Damage

Interface and Bulk Oxide Damage Induced by Boron Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
H. Wong ◽  
N.W. Cheung
Keyword(s):  
Tunneling Current ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
Capacitance Voltage ◽  
Boron Implantation ◽  
Thin Oxide ◽  
Oxide Damage

ABSTRACTInvestigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

Ultra thin-oxide damage from gate charging during PETEOS deposition processing

2003 ◽  
Author(s):  
Young-Gwan Kim ◽  
Hazoong Kim ◽  
Kang-Sik Youn ◽  
Dae-Gwan Kang ◽  
Jeong-Mo Hwang
Keyword(s):  
Thin Oxide ◽  
Oxide Damage

Sample Preparation methodology for ultra thin oxide damage in Metal–Insulator–Metal capacitors

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2064-2067 ◽  
Author(s):  
Giancarlo Calvagno ◽  
Giuseppe Muni ◽  
Andrea Jossa ◽  
Domenico Mello
Keyword(s):  
Sample Preparation ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Thin Oxide ◽  
Oxide Damage
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