Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

C. Y. Zhu; F. Zhang; R. A. Ferreyra; V. Avrutin; Ü. Özgür; H. Morkoç

doi:10.1063/1.4826324

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

Applied Physics Letters ◽

10.1063/1.4826324 ◽

2013 ◽

Vol 103 (16) ◽

pp. 163504 ◽

Cited By ~ 3

Author(s):

C. Y. Zhu ◽

F. Zhang ◽

R. A. Ferreyra ◽

V. Avrutin ◽

Ü. Özgür ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Stress Effects ◽

Electrical Stress ◽

Heterojunction Field Effect Transistors

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Non-uniform stress effects in GaN based heterojunction field effect transistors

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. ◽

10.1109/csics.2005.1531791 ◽

2005 ◽

Cited By ~ 2

Author(s):

N. Braga ◽

R. Mickevicius ◽

V.S. Rao ◽

W. Fichtner ◽

R. Gaska

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Uniform Stress ◽

Stress Effects ◽

Heterojunction Field Effect Transistors

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Polythiophene–perylene diimide heterojunction field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/c3tc00562c ◽

2013 ◽

Vol 1 (13) ◽

pp. 2433 ◽

Cited By ~ 28

Author(s):

Sreenivasa Reddy Puniredd ◽

Adam Kiersnowski ◽

Glauco Battagliarin ◽

Wojciech Zajączkowski ◽

Wallace W. H. Wong ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Perylene Diimide ◽

Heterojunction Field Effect Transistors

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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06ka03 ◽

2018 ◽

Vol 57 (6S3) ◽

pp. 06KA03

Author(s):

Kenta Watanabe ◽

Daiki Terashima ◽

Mikito Nozaki ◽

Takahiro Yamada ◽

Satoshi Nakazawa ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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Original Demonstration of Depletion-Mode and Enhancement-Mode AlGaN/GaN Heterojunction Field-Effect Transistors

Gallium Nitride Power Devices ◽

10.1201/9781315196626-5 ◽

2017 ◽

pp. 111-143

Author(s):

Zhigang Wang ◽

Bing Wang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterojunction Field Effect Transistors

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Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1984.21654 ◽

1984 ◽

Vol 31 (8) ◽

pp. 1015-1027 ◽

Cited By ~ 127

Author(s):

P.M. Solomon ◽

H. Morkoc

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

Applied Physics Letters ◽

10.1063/1.3129865 ◽

2009 ◽

Vol 94 (17) ◽

pp. 171117 ◽

Cited By ~ 21

Author(s):

Z. Chen ◽

Y. Pei ◽

S. Newman ◽

D. Brown ◽

R. Chung ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Heterojunction ◽

Heterojunction Field Effect Transistors

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Thin‐film heterojunction field‐effect transistors with multiple subthreshold swings for large‐area/flexible electronics and displays

Electronics Letters ◽

10.1049/el.2016.4597 ◽

2017 ◽

Vol 53 (8) ◽

pp. 570-571 ◽

Cited By ~ 1

Author(s):

B. Hekmatshoar

Keyword(s):

Thin Film ◽

Flexible Electronics ◽

Field Effect ◽

Field Effect Transistors ◽

Large Area ◽

Heterojunction Field Effect Transistors

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SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS

Advanced Semiconductor Devices ◽

10.1142/9789812770332_0004 ◽

2007 ◽

Author(s):

Valentin O. Turin ◽

Michael S. Shur ◽

Dmitry B. Veksler

Keyword(s):

Gallium Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors ◽

Recessed Gate

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Thermal resistance of power submicron heterojunction field-effect transistors

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) ◽

10.1109/elnano.2013.6552007 ◽

2013 ◽

Cited By ~ 1

Author(s):

Vladimir Timofeyev ◽

Elena Semenovskaya

Keyword(s):

Thermal Resistance ◽

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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Correction to "Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs"

Proceedings of the IEEE ◽

10.1109/proc.1986.13695 ◽

1986 ◽

Vol 74 (12) ◽

pp. 1803-1803

Author(s):

T.J. Drummond

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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