High-temperature charge loss mechanism in a floating-gate EPROM with an oxide-nitride-oxide (ONO) interpoly stacked dielectric

1991 ◽  
Vol 12 (9) ◽  
pp. 506-503 ◽  
Author(s):  
C.-S. Pan ◽  
K. Wu ◽  
D. Chin ◽  
G. Sery ◽  
J. Kiely
Keyword(s):  
High Temperature ◽  
Floating Gate ◽  
Loss Mechanism ◽  
Charge Loss ◽  
Nitride Oxide

Charge loss mechanism of non-volatile V3Si nano-particles memory device

2012 ◽  
Vol 101 (23) ◽  
pp. 233510 ◽  
Author(s):  
Dongwook Kim ◽  
Dong Uk Lee ◽  
Eun Kyu Kim ◽  
Won-Ju Cho
Keyword(s):  
Memory Device ◽  
Nano Particles ◽  
Loss Mechanism ◽  
Charge Loss

A High Temperature Floating Gate MOSFET Driver for on the Engine Injector Control

2006 ◽  
pp. 239-245
Author(s):  
P. Delatte ◽  
V. Dessard ◽  
G. Picún ◽  
O. Stevens ◽  
L. Demeûs
Keyword(s):  
High Temperature ◽  
Floating Gate

Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy

2013 ◽  
Vol 34 (7) ◽  
pp. 870-872 ◽  
Author(s):  
Yulong Han ◽  
Zongliang Huo ◽  
Xinkai Li ◽  
Guoxing Chen ◽  
Xiaonan Yang ◽  
...  
Keyword(s):  
Variable Temperature ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Loss Mechanism ◽  
Force Microscopy ◽  
Charge Loss

scholarly journals Synthesis of High-Quality Crystalline Carbon Nitride Oxide by Selectively Driving the High-Temperature Instability of Urea with Pressure

2017 ◽  
Vol 121 (36) ◽  
pp. 19872-19879 ◽  
Author(s):  
Kamil Dziubek ◽  
Margherita Citroni ◽  
Samuele Fanetti ◽  
Andrew B. Cairns ◽  
Roberto Bini
Keyword(s):  
High Temperature ◽  
Carbon Nitride ◽  
High Quality ◽  
Temperature Instability ◽  
Nitride Oxide

Effect of Ion Energy on Charge Loss From Floating Gate Memories

2008 ◽  
Vol 55 (4) ◽  
pp. 2042-2047 ◽  
Author(s):  
Giorgio Cellere ◽  
Alessandro Paccagnella ◽  
Angelo Visconti ◽  
Mauro Bonanomi ◽  
Silvia Beltrami ◽  
...  
Keyword(s):  
Floating Gate ◽  
Ion Energy ◽  
Charge Loss
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