Charge loss mechanism of non-volatile V3Si nano-particles memory device

2012 ◽  
Vol 101 (23) ◽  
pp. 233510 ◽  
Author(s):  
Dongwook Kim ◽  
Dong Uk Lee ◽  
Eun Kyu Kim ◽  
Won-Ju Cho
Keyword(s):  
Memory Device ◽  
Nano Particles ◽  
Loss Mechanism ◽  
Charge Loss

Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy

2013 ◽  
Vol 34 (7) ◽  
pp. 870-872 ◽  
Author(s):  
Yulong Han ◽  
Zongliang Huo ◽  
Xinkai Li ◽  
Guoxing Chen ◽  
Xiaonan Yang ◽  
...  
Keyword(s):  
Variable Temperature ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Loss Mechanism ◽  
Force Microscopy ◽  
Charge Loss

Electrically Re-Writable Non-Volatile Memory Device - Using a Blend of Sea Salt and Polymer

2008 ◽  
Vol 54 ◽  
pp. 486-490 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Polyvinyl Acetate ◽  
Organic Molecules ◽  
Memory Device ◽  
Sea Salt ◽  
Nano Particles ◽  
Memory Devices ◽  
Current Voltage ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Charging Mechanism

Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for optical, electronic and other applications. Recently, it has been shown that nano-sized particles and small organic molecules embedded in polymer matrices can be used to realise memory devices. Such memory devices are simple to fabricate via the spin-on technique. This work presents an attempt to use sea salt, embedded in polyvinyl acetate, in the making of the memory devices. A polymer blend of polyvinyl acetate and sodium chloride (NaCl) was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and a top contact was evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The possible charging mechanism, based on the electric dipole formation, is presented in this work. Polymer blends of polyvinyl acetate with nano-particles of BaTiO3 are also investigated to further our understanding of charging mechanism(s).

Electrical Characterization of Non Volatile Memory Device with In2O3 Nano-Particles Embedded in Polyimide

2007 ◽  
Vol 51 (96) ◽  
pp. 318 ◽  
Author(s):  
Dong Uk LEE ◽  
Seon Pil KIM ◽  
Jae-Hoon KIM ◽  
Eun Kyu KIM ◽  
Hyun-Mo KOO ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Nano Particles ◽  
Non Volatile Memory ◽  
Volatile Memory

The investigation of charge loss mechanism in a two-bit wrapped-gate nitride storage nonvolatile memory

2010 ◽  
Vol 97 (18) ◽  
pp. 183508 ◽  
Author(s):  
Y. H. Ho ◽  
Steve S. Chung ◽  
H. H. Chen
Keyword(s):  
Nonvolatile Memory ◽  
Loss Mechanism ◽  
Charge Loss

Write once read many memory device from Tris-8 (-hydroxyquinoline) aluminum and Indium tin oxide nano particles

2011 ◽  
Author(s):  
J. Aneesh ◽  
P. Predeep ◽  
P. Predeep ◽  
Mrinal Thakur ◽  
M. K. Ravi Varma
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Memory Device ◽  
Nano Particles

Characteristics of Organic Memory Using Metal Oxide Nano-clusters

2010 ◽  
Vol 1250 ◽  
Author(s):  
You-Wei Cheng ◽  
Tzu-Yueh Chang ◽  
Po-Tsung Lee
Keyword(s):  
Layer Structure ◽  
Charge Trapping ◽  
Differential Resistance ◽  
Memory Device ◽  
Nano Particles ◽  
Density Current ◽  
Current Ratio ◽  
Organic Memory ◽  
Organic Memory Device ◽  
A Charge

AbstractIn this report, electrical properties of an organic memory device with a tri-layer structure, MoO3 nano-clusters layer sandwiched between Alq3 thin films, are investigated. The device using this kind of structure exhibits a large ON/OFF density current ratio over 104, long retention time over 1hr, and an electrically programmable character. The formation of the bistable resistance switching of the device originates from a charge trapping effect of the MoO3 nano-clusters layer. Moreover, current density-voltage (J-V) characteristics of the device are quite different from those of OBDs using MoO3 nano-particles. No negative differential resistance is observed in the J-V curve of the device. This may be due to the distinct surface morphology of the MoO3 layer on the Alq3 thin film.

Sign in / Sign up

Export Citation Format

Share Document