Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on

W.Q. Li; P.K. Bhattacharya

doi:10.1109/55.103615

Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on

IEEE Electron Device Letters ◽

10.1109/55.103615 ◽

1991 ◽

Vol 12 (7) ◽

pp. 385-386 ◽

Cited By ~ 3

Author(s):

W.Q. Li ◽

P.K. Bhattacharya

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Epitaxial Gaas ◽

Molecular Beam Epitaxial

Download Full-text

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Journal of Applied Physics ◽

10.1063/1.347140 ◽

1990 ◽

Vol 68 (1) ◽

pp. 347-350 ◽

Cited By ~ 23

Author(s):

J. Pamulapati ◽

R. Lai ◽

G. I. Ng ◽

Y. C. Chen ◽

P. R. Berger ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Growth Modes ◽

Molecular Beam Epitaxial Growth

Download Full-text

Molecular beam epitaxial GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor applications

Applied Physics Letters ◽

10.1063/1.92487 ◽

1981 ◽

Vol 38 (9) ◽

pp. 708-710 ◽

Cited By ~ 27

Author(s):

W. I. Wang ◽

S. Judaprawira ◽

C. E. C. Wood ◽

L. F. Eastman

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Epitaxial Gaas ◽

Molecular Beam Epitaxial ◽

Effect Transistor

Download Full-text

Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Thin Solid Films ◽

10.1016/0040-6090(91)90373-6 ◽

1991 ◽

Vol 196 (2) ◽

pp. 295-303 ◽

Cited By ~ 1

Author(s):

J. Zhang ◽

N.C. Tien ◽

E.W. Lin ◽

H.H. Wieder ◽

W.H. Ku ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

Download Full-text

Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Journal of Applied Physics ◽

10.1063/1.345368 ◽

1990 ◽

Vol 67 (7) ◽

pp. 3323-3327 ◽

Cited By ~ 23

Author(s):

Kevin Chang ◽

Pallab Bhattacharya ◽

Richard Lai

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Device Performance ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

Download Full-text

Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90571-d ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 29-35 ◽

Cited By ~ 5

Author(s):

Kanji Yoh ◽

Kazumasa Kiyomi ◽

Mitsuaki Yano ◽

Masataka Inoue

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Double Quantum ◽

Molecular Beam Epitaxial ◽

Heterojunction Field Effect Transistors ◽

Molecular Beam Epitaxial Growth

Download Full-text

Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583751 ◽

1987 ◽

Vol 5 (3) ◽

pp. 785 ◽

Cited By ~ 12

Author(s):

H. T. Griem

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Electron Gas ◽

Dimensional Electron ◽

Gas Field ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

Download Full-text

Performance characteristics of In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors realized by two‐step epitaxy: Effects of molecular‐beam epitaxial regrowth

Journal of Applied Physics ◽

10.1063/1.344952 ◽

1990 ◽

Vol 67 (9) ◽

pp. 4345-4348 ◽

Cited By ~ 9

Author(s):

R. Lai ◽

P. K. Bhattacharya

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Epitaxial Regrowth

Download Full-text

Characterization ofDXcenters in molecular‐beam‐epitaxial grown Si‐doped AlxGa1−xAs using Schottky barriers and modulation‐doped field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.336153 ◽

1985 ◽

Vol 58 (2) ◽

pp. 845-851 ◽

Cited By ~ 9

Author(s):

S. Subramanian ◽

U. Schuller ◽

J. R. Arthur

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Schottky Barriers ◽

Molecular Beam Epitaxial ◽

Si Doped

Download Full-text

Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583393 ◽

1986 ◽

Vol 4 (2) ◽

pp. 622 ◽

Cited By ~ 13

Author(s):

T. Ohashi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Molecular Beam Epitaxial ◽

Room Temperature Operation

Download Full-text

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

Applied Physics Letters ◽

10.1063/1.107504 ◽

1992 ◽

Vol 61 (13) ◽

pp. 1585-1587 ◽

Cited By ~ 34

Author(s):

H. Shen ◽

F. C. Rong ◽

R. Lux ◽

J. Pamulapati ◽

M. Taysing‐Lara ◽

...

Keyword(s):

Low Temperature ◽

Fermi Level ◽

Molecular Beam ◽

Epitaxial Gaas ◽

Fermi Level Pinning ◽

Molecular Beam Epitaxial

Download Full-text