Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors

T. Ohashi

doi:10.1116/1.583393

Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583393 ◽

1986 ◽

Vol 4 (2) ◽

pp. 622 ◽

Cited By ~ 13

Author(s):

T. Ohashi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Molecular Beam Epitaxial ◽

Room Temperature Operation

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Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal–insulator–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587888 ◽

1995 ◽

Vol 13 (2) ◽

pp. 786 ◽

Cited By ~ 2

Author(s):

R. T. Fayfield

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Interface States ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Nitride Layers

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Journal of Applied Physics ◽

10.1063/1.347140 ◽

1990 ◽

Vol 68 (1) ◽

pp. 347-350 ◽

Cited By ~ 23

Author(s):

J. Pamulapati ◽

R. Lai ◽

G. I. Ng ◽

Y. C. Chen ◽

P. R. Berger ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Growth Modes ◽

Molecular Beam Epitaxial Growth

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Cited By ~ 3

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Journal of Computational Electronics ◽

10.1007/s10825-019-01320-8 ◽

2019 ◽

Vol 18 (2) ◽

pp. 527-533

Author(s):

Jing Sun ◽

Yanping Li ◽

Lei Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain

ECS Meeting Abstracts ◽

10.1149/ma2008-01/16/669 ◽

2008 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517469 ◽

2005 ◽

Author(s):

N.C. Paul ◽

M. Takebe ◽

M. Tametou ◽

H. Seto ◽

Y. Fujino ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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