Characterization ofDXcenters in molecular‐beam‐epitaxial grown Si‐doped AlxGa1−xAs using Schottky barriers and modulation‐doped field‐effect transistors

S. Subramanian; U. Schuller; J. R. Arthur

doi:10.1063/1.336153

Characterization ofDXcenters in molecular‐beam‐epitaxial grown Si‐doped AlxGa1−xAs using Schottky barriers and modulation‐doped field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.336153 ◽

1985 ◽

Vol 58 (2) ◽

pp. 845-851 ◽

Cited By ~ 9

Author(s):

S. Subramanian ◽

U. Schuller ◽

J. R. Arthur

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Schottky Barriers ◽

Molecular Beam Epitaxial ◽

Si Doped

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The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Journal of Applied Physics ◽

10.1063/1.347140 ◽

1990 ◽

Vol 68 (1) ◽

pp. 347-350 ◽

Cited By ~ 23

Author(s):

J. Pamulapati ◽

R. Lai ◽

G. I. Ng ◽

Y. C. Chen ◽

P. R. Berger ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Growth Modes ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Thin Solid Films ◽

10.1016/0040-6090(91)90373-6 ◽

1991 ◽

Vol 196 (2) ◽

pp. 295-303 ◽

Cited By ~ 1

Author(s):

J. Zhang ◽

N.C. Tien ◽

E.W. Lin ◽

H.H. Wieder ◽

W.H. Ku ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Journal of Applied Physics ◽

10.1063/1.345368 ◽

1990 ◽

Vol 67 (7) ◽

pp. 3323-3327 ◽

Cited By ~ 23

Author(s):

Kevin Chang ◽

Pallab Bhattacharya ◽

Richard Lai

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Device Performance ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on

IEEE Electron Device Letters ◽

10.1109/55.103615 ◽

1991 ◽

Vol 12 (7) ◽

pp. 385-386 ◽

Cited By ~ 3

Author(s):

W.Q. Li ◽

P.K. Bhattacharya

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Epitaxial Gaas ◽

Molecular Beam Epitaxial

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Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90571-d ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 29-35 ◽

Cited By ~ 5

Author(s):

Kanji Yoh ◽

Kazumasa Kiyomi ◽

Mitsuaki Yano ◽

Masataka Inoue

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Double Quantum ◽

Molecular Beam Epitaxial ◽

Heterojunction Field Effect Transistors ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583751 ◽

1987 ◽

Vol 5 (3) ◽

pp. 785 ◽

Cited By ~ 12

Author(s):

H. T. Griem

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Electron Gas ◽

Dimensional Electron ◽

Gas Field ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Performance characteristics of In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors realized by two‐step epitaxy: Effects of molecular‐beam epitaxial regrowth

Journal of Applied Physics ◽

10.1063/1.344952 ◽

1990 ◽

Vol 67 (9) ◽

pp. 4345-4348 ◽

Cited By ~ 9

Author(s):

R. Lai ◽

P. K. Bhattacharya

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Epitaxial Regrowth

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Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583393 ◽

1986 ◽

Vol 4 (2) ◽

pp. 622 ◽

Cited By ~ 13

Author(s):

T. Ohashi

Keyword(s):

Field Effect ◽

Room Temperature ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Molecular Beam Epitaxial ◽

Room Temperature Operation

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c01025 ◽

2020 ◽

Vol 12 (16) ◽

pp. 18667-18673 ◽

Cited By ~ 1

Author(s):

Gaurav Pande ◽

Jyun-Yan Siao ◽

Wei-Liang Chen ◽

Chien-Ju Lee ◽

Raman Sankar ◽

...

Keyword(s):

Boron Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Hexagonal Boron Nitride ◽

Schottky Barriers

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