Molecular beam epitaxial GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor applications

1981 ◽  
Vol 38 (9) ◽  
pp. 708-710 ◽  
Author(s):  
W. I. Wang ◽  
S. Judaprawira ◽  
C. E. C. Wood ◽  
L. F. Eastman
Keyword(s):  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Effect Transistor

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer

1979 ◽  
Vol 34 (11) ◽  
pp. 740-741 ◽  
Author(s):  
Y. Katayama ◽  
Y. Shiraki ◽  
K. L. I. Kobayashi ◽  
K. F. Komatsubara ◽  
N. Hashimoto
Keyword(s):  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Silicon Layer ◽  
Epitaxial Silicon ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Silicon Layer ◽  
Effect Transistor

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor
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