Fabrication and characterization of narrow-band Bragg-reflection filters in silicon-on-insulator ridge waveguides

2001 ◽  
Vol 19 (12) ◽  
pp. 1938-1942 ◽  
Author(s):  
T.E. Murphy ◽  
J.T. Hastings ◽  
H.I. Smith
Keyword(s):  
Narrow Band ◽  
Bragg Reflection ◽  
Silicon On Insulator ◽  
Ridge Waveguides ◽  
Fabrication And Characterization

Characterization of a Non-Interdigitated Comb Drive

2018 ◽  
Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  
Keyword(s):  
Quality Factor ◽  
Fundamental Frequency ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
High Quality ◽  
Sensor Applications ◽  
Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

Fabrication and Characterization of Vertical Travel Linear Microactuator

2004 ◽  
Author(s):  
Risaku Toda ◽  
Eui-Hyeok Yang
Keyword(s):  
Piezoelectric Actuator ◽  
Actuation Voltage ◽  
Silicon On Insulator ◽  
Test Bed ◽  
Device Structure ◽  
Beam Geometry ◽  
Out Of Plane ◽  
Fabrication And Characterization ◽  
Vertical Travel

This paper describes design, fabrication and characterization of a proof-of-concept vertical travel linear microactuator designed to provide out-of-plane actuation for high precision positioning applications in space. The microactuator is designed to achieve vertical actuation travel by incorporating compliant beam structures within a SOI (Silicon on Insulator) wafer. Device structure except for the piezoelectric actuator is fabricated on the SOI wafer using Deep Reactive Ion Etch (DRIE) process. Incremental travel distance of the piezoelectric actuator is adjustable at nanometer level by controlling voltage. Bistable beam geometry is employed to minimize initial gaps between electrodes. The footprint of an actuator is approximately 2 mm × 4 mm. Actuation is characterized with LabVIEW-based test bed. Actuation voltage sequence is generated by the LabVIEW controlled power relays. Vertical actuation in the range of 500 nm over 10-cycle was observed using WYKO RST Plus Optical Profiler.

Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor

2008 ◽  
Vol 7 (5) ◽  
pp. 544-550 ◽  
Author(s):  
Young Chai Jung ◽  
Keun Hwi Cho ◽  
Byoung Hak Hong ◽  
Seung Hun Son ◽  
Duk Soo Kim ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Fabrication And Characterization

Fabrication and Characterization of Small Optical Ridge Waveguides Based on SU-8 Polymer

2009 ◽  
Vol 27 (18) ◽  
pp. 4091-4096 ◽  
Author(s):  
Bo Yang ◽  
Liu Yang ◽  
Rui Hu ◽  
Zhen Sheng ◽  
Daoxin Dai ◽  
...  
Keyword(s):  
Ridge Waveguides ◽  
Fabrication And Characterization

A SOI-MEMS-Based Single Axis Active Probe for Cellular Force Sensing and Cell Manipulation

2010 ◽  
Author(s):  
Li Zhang ◽  
Jingyan Dong
Keyword(s):  
Stage Structure ◽  
Silicon On Insulator ◽  
Cell Manipulation ◽  
Force Sensing ◽  
Deep Reactive Ion Etching ◽  
Active Probing ◽  
Comb Drives ◽  
Active Probe ◽  
Fabrication And Characterization

This paper presents the design, analysis, fabrication, and characterization of an electrostatically driven single axis active probing device for cellular force sensing and cell manipulation applications. The active probe is actuated by linear comb driver to create the motion in the probing direction. Both actuation and sensing comb drives are designed for the probing stage. The sensing comb structures enable us to sense the probe displacement when it is actuated, which enables application of force balanced sensing. The designed active probing device has an overall size of 5 mm × 4.5 mm, is fabricated on a silicon-on-insulator (SOI) substrate through surface micromachining technologies and deep reactive-ion etching (DRIE) process. The probe stage structure is fabricated on the 10-μm-thick device layer of SOI wafer. The handle layer beneath probe stage is etched away by DRIE process to decrease the film damping between the stage and the handle wafer thus achieving high quality factor. The proposed single axis probe is aimed at sensing cellular force which ranges from pN to μN and cell manipulation applications.

Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

1999 ◽  
Vol 146 (1-4) ◽  
pp. 203-208 ◽  
Author(s):  
H Fujii ◽  
S Kanemaru ◽  
H Hiroshima ◽  
S.M Gorwadkar ◽  
T Matsukawa ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Fabrication And Characterization ◽  
Edge Emitter

Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors

2012 ◽  
Vol 503 ◽  
pp. 43-48 ◽  
Author(s):  
Chuan Guo Dou ◽  
Yan Hong Wu ◽  
Heng Yang ◽  
Xin Xin Li
Keyword(s):  
Printed Circuit Board ◽  
Temperature Sensors ◽  
Absolute Temperature ◽  
Silicon On Insulator ◽  
Circuit Board ◽  
Crystal Direction ◽  
Flexible Printed Circuit ◽  
On Line ◽  
Fabrication And Characterization

This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.

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