Scanning near-field optical microscope for the characterization of optical integrated waveguides

2000 ◽  
Vol 18 (3) ◽  
pp. 370-374 ◽  
Author(s):  
X. Borrise ◽  
D. Jimenez ◽  
N. Barniol ◽  
F. Perez-Murano ◽  
X. Aymerich
Keyword(s):  
Near Field ◽  
Optical Microscope

Characterization of near-field optical microscope probes

2008 ◽  
Vol 40 (3-4) ◽  
pp. 482-485 ◽  
Author(s):  
Petr Klapetek ◽  
Miroslav Valtr ◽  
Petr Klenovský ◽  
Jiří Buršík
Keyword(s):  
Near Field ◽  
Optical Microscope

Scanning near-field optical microscope for characterization of single mode fibers

2005 ◽  
Author(s):  
M. Foroni ◽  
M. Bottacini ◽  
F. Poli ◽  
S. Selleri ◽  
A. Cucinotta
Keyword(s):  
Near Field ◽  
Single Mode ◽  
Optical Microscope

Characterization of carbon nano-materials by apertureless near-field scanning optical microscope-Raman spectroscopy

2012 ◽  
Author(s):  
Kyoung-Duck Park ◽  
Yong Hwan Kim ◽  
Jin Ho Park ◽  
Jung Su Park ◽  
Young-Hee Lee ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Near Field ◽  
Optical Microscope ◽  
Nano Materials ◽  
Near Field Scanning

scholarly journals Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1452
Author(s):  
Agata Roszkiewicz ◽  
Amrita Jain ◽  
Marian Teodorczyk ◽  
Wojciech Nasalski
Keyword(s):  
Quartz Substrate ◽  
Near Field ◽  
Sleep Time ◽  
Optical Microscope ◽  
Phase Zone ◽  
Positive Photoresist ◽  
Photoresist Layer ◽  
532 Nm ◽  
Rigorous Method

Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71–87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate.

Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence

2006 ◽  
Vol 88 (16) ◽  
pp. 161905 ◽  
Author(s):  
M. Yoshikawa ◽  
R. Sugie ◽  
M. Murakami ◽  
T. Matsunobe ◽  
K. Matsuda ◽  
...  
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Defect Characterization ◽  
Si Doped

Optical Integrated Waveguides Characterization by Scanning Near Field Optical Microscope

1999 ◽  
Vol 588 ◽  
Author(s):  
X. Borrisé ◽  
N. Barniol ◽  
F. Pérez-Murano ◽  
G. Abadal ◽  
X. Aymerich ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Near Field ◽  
Propagation Distance ◽  
Optical Microscope ◽  
Atomic Force ◽  
Integrated Devices ◽  
New Information ◽  
Integrated Optical ◽  
Low Dimensional

AbstractIn this work, we present (i) the development of a scanning near-field optical microscope (SNOM) for the characterization of optical integrated devices and (ii) the description of a new lithographic technique for the modification of standard integrated optical waveguides. SNOM images of rib waveguides allow to characterise the distribution of the guided modes for up to 1 mm of propagation distance. Some of the characterised waveguides present a periodical modulation of the light in the direction of propagation which is attributed to the Tien effect. In addition, we have performed high resolution modifications on the rib waveguide with an atomic force microscope combined with standard microelectronics processes. We demonstrate that the combination of this new lithographic technique with SNOM characterization allows to obtain new information about the propagation of the light in low dimensional structures.

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