Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence

2006 ◽  
Vol 88 (16) ◽  
pp. 161905 ◽  
Author(s):  
M. Yoshikawa ◽  
R. Sugie ◽  
M. Murakami ◽  
T. Matsunobe ◽  
K. Matsuda ◽  
...  
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Defect Characterization ◽  
Si Doped

Characterization of near-field optical microscope probes

2008 ◽  
Vol 40 (3-4) ◽  
pp. 482-485 ◽  
Author(s):  
Petr Klapetek ◽  
Miroslav Valtr ◽  
Petr Klenovský ◽  
Jiří Buršík
Keyword(s):  
Near Field ◽  
Optical Microscope

Scanning near-field optical microscope for characterization of single mode fibers

2005 ◽  
Author(s):  
M. Foroni ◽  
M. Bottacini ◽  
F. Poli ◽  
S. Selleri ◽  
A. Cucinotta
Keyword(s):  
Near Field ◽  
Single Mode ◽  
Optical Microscope

Characterization of carbon nano-materials by apertureless near-field scanning optical microscope-Raman spectroscopy

2012 ◽  
Author(s):  
Kyoung-Duck Park ◽  
Yong Hwan Kim ◽  
Jin Ho Park ◽  
Jung Su Park ◽  
Young-Hee Lee ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Near Field ◽  
Optical Microscope ◽  
Nano Materials ◽  
Near Field Scanning

Scanning near-field optical microscope for the characterization of optical integrated waveguides

2000 ◽  
Vol 18 (3) ◽  
pp. 370-374 ◽  
Author(s):  
X. Borrise ◽  
D. Jimenez ◽  
N. Barniol ◽  
F. Perez-Murano ◽  
X. Aymerich
Keyword(s):  
Near Field ◽  
Optical Microscope

scholarly journals Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1452
Author(s):  
Agata Roszkiewicz ◽  
Amrita Jain ◽  
Marian Teodorczyk ◽  
Wojciech Nasalski
Keyword(s):  
Quartz Substrate ◽  
Near Field ◽  
Sleep Time ◽  
Optical Microscope ◽  
Phase Zone ◽  
Positive Photoresist ◽  
Photoresist Layer ◽  
532 Nm ◽  
Rigorous Method

Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71–87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate.

The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method

1991 ◽  
Vol 30 (Part 1, No. 11A) ◽  
pp. 2863-2867 ◽  
Author(s):  
Long Wei ◽  
Yang-Koo Cho ◽  
Chisei Dosho ◽  
Toshikazu Kurihara ◽  
Shoichiro Tanigawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Characterization ◽  
Si Doped
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