A realistic fault model and test algorithms for static random access memories

1990 ◽  
Vol 9 (6) ◽  
pp. 567-572 ◽  
Author(s):  
R. Dekker ◽  
F. Beenker ◽  
L. Thijssen
Keyword(s):  
Random Access ◽  
Fault Model ◽  
Static Random Access Memories

scholarly journals III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

2016 ◽  
Vol 22 (6) ◽  
pp. 295-304 ◽  
Author(s):  
Theonitsa Alexoudi ◽  
Dimitrios Fitsios ◽  
Alexandre Bazin ◽  
Paul Monnier ◽  
Rama Raj ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Random Access ◽  
Laser Technology ◽  
Static Random Access Memories

Low-Power Dynamic Memory Word Line Decoding for Static Random Access Memories

2008 ◽  
Vol 43 (11) ◽  
pp. 2524-2532 ◽  
Author(s):  
Giby Samson ◽  
Nagaraj Ananthapadmanabhan ◽  
Sayeed A. Badrudduza ◽  
Lawrence T. Clark
Keyword(s):  
Low Power ◽  
Random Access ◽  
Dynamic Memory ◽  
Power Dynamic ◽  
Static Random Access Memories ◽  
Memory Word

A fault model for multivalued NMOS dynamic random access memories

1989 ◽  
Vol 29 (2) ◽  
pp. 137-143
Author(s):  
R. Venkatapathi Naidu ◽  
S. Mahapatra
Keyword(s):  
Random Access ◽  
Fault Model

Si/SiGe Tunneling Static Random Access Memories

2013 ◽  
Vol 50 (9) ◽  
pp. 987-990 ◽  
Author(s):  
G. Ternent ◽  
D. J. Paul
Keyword(s):  
Random Access ◽  
Static Random Access Memories

Prompt and Total Dose Response of Hard 4k and 16k CMOS Static Random Access Memories (SRAMs)

1984 ◽  
Vol 31 (6) ◽  
pp. 1354-1357 ◽  
Author(s):  
A. A. Witteles ◽  
H. Volmerange ◽  
H. Davidson ◽  
H. Yue ◽  
R. Jennings ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Response ◽  
Random Access ◽  
Static Random Access Memories

scholarly journals A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 nm CMOS Technology

2020 ◽  
Vol 19 ◽  
Keyword(s):  
Comparative Analysis ◽  
Random Access ◽  
Cmos Technology ◽  
Noise Margin ◽  
Sram Cell ◽  
Static Random Access Memories ◽  
Node Voltage ◽  
Improve Stability ◽  
Static Noise ◽  
Better Than

This paper examines the factors that affect the Static Noise Margin (SNM) of a Static Random Access memories which focus on optimizing Read and Write operation of 8T SRAM cell which is better than 6T SRAM cell Using Swing Restoration for Dual Node Voltage. The read and Write time and improve Stability. New 8T SRAM technique on the circuit or architecture level is required. In this paper Comparative Analysis of 6T and 8T SRAM Cells with Improved Read and Write Margin is done for 130 nm Technology with Cadence Virtuoso schematics Tool.

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