Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system

1995 ◽  
Vol 16 (5) ◽  
pp. 178-180 ◽  
Author(s):  
J. Shen ◽  
G. Kramer ◽  
S. Tehrani ◽  
H. Goronkin
Keyword(s):  
Random Access ◽  
Material System ◽  
Tunneling Diodes ◽  
Interband Tunneling ◽  
Static Random Access Memories

scholarly journals III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

2016 ◽  
Vol 22 (6) ◽  
pp. 295-304 ◽  
Author(s):  
Theonitsa Alexoudi ◽  
Dimitrios Fitsios ◽  
Alexandre Bazin ◽  
Paul Monnier ◽  
Rama Raj ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Random Access ◽  
Laser Technology ◽  
Static Random Access Memories

scholarly journals Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jodi M. Iwata-Harms ◽  
Guenole Jan ◽  
Santiago Serrano-Guisan ◽  
Luc Thomas ◽  
Huanlong Liu ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Speed ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer Torque ◽  
Tunnel Barrier ◽  
Magnetic Memory ◽  
Material System ◽  
Highly Efficient ◽  
Memory Applications

AbstractPerpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the potential to simultaneously exhibit efficient, high speed switching in accordance with the conservation of spin angular momentum, and high thermal stability owing to the enhanced interfacial PMA that arises from the two CoFeB-MgO interfaces. However, the difficulty in attaining PMA in ultrathin CoFeB layers has imposed the use of thicker CoFeB layers which are incompatible with high speed requirements. In this work, we succeeded in depositing a functional CoFeB layer as thin as five monolayers between two MgO interfaces using magnetron sputtering. Remarkably, the insertion of Mg within the CoFeB gave rise to an ultrathin CoFeB layer with large anisotropy, high saturation magnetization, and good annealing stability to temperatures upwards of 400 °C. When combined with a low resistance-area product MgO tunnel barrier, ultrathin CoFeB magnetic tunnel junctions (MTJs) demonstrate switching voltages below 500 mV at speeds as fast as 1 ns in 30 nm devices, thus opening a new realm of high speed and highly efficient nonvolatile memory applications.

Low-Power Dynamic Memory Word Line Decoding for Static Random Access Memories

2008 ◽  
Vol 43 (11) ◽  
pp. 2524-2532 ◽  
Author(s):  
Giby Samson ◽  
Nagaraj Ananthapadmanabhan ◽  
Sayeed A. Badrudduza ◽  
Lawrence T. Clark
Keyword(s):  
Low Power ◽  
Random Access ◽  
Dynamic Memory ◽  
Power Dynamic ◽  
Static Random Access Memories ◽  
Memory Word

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

2002 ◽  
Vol 49 (1) ◽  
pp. 19-24 ◽  
Author(s):  
P. Fay ◽  
Jiang Lu ◽  
Yanyang Xu ◽  
N. Dame ◽  
D.H. Chow ◽  
...  
Keyword(s):  
Tunneling Diodes ◽  
Interband Tunneling

scholarly journals Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

2012 ◽  
Vol 59 (3) ◽  
pp. 602-609 ◽  
Author(s):  
Anisha Ramesh ◽  
Tyler A. Growden ◽  
Paul R. Berger ◽  
Roger Loo ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Doping Dependence ◽  
Tunneling Diodes ◽  
Delta Doping ◽  
Interband Tunneling
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