Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

T. Egawa; T. Soga; T. Jimbo; M. Umeno

doi:10.1109/3.90007

Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

IEEE Journal of Quantum Electronics ◽

10.1109/3.90007 ◽

1991 ◽

Vol 27 (6) ◽

pp. 1798-1803 ◽

Cited By ~ 15

Author(s):

T. Egawa ◽

T. Soga ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Intermediate Layers ◽

Continuous Wave Operation ◽

Metalorganic Chemical

Download Full-text

First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Continuous Wave Operation ◽

Metalorganic Chemical

Download Full-text

Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.96366 ◽

1985 ◽

Vol 47 (10) ◽

pp. 1027-1028 ◽

Cited By ~ 106

Author(s):

Masao Ikeda ◽

Yoshifumi Mori ◽

Hiromitsu Sato ◽

Kunio Kaneko ◽

Naozo Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Heterostructure Laser ◽

Continuous Wave Operation ◽

Metalorganic Chemical

Download Full-text

Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-999-0028-8 ◽

1999 ◽

Vol 28 (3) ◽

pp. 287-289 ◽

Cited By ~ 18

Author(s):

Katsunori Yanashima ◽

Shigeki Hashimoto ◽

Tomonori Hino ◽

Kenji Funato ◽

Toshimasa Kobayashi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Laser Diodes ◽

Chemical Vapor ◽

Continuous Wave Operation ◽

Metalorganic Chemical

Download Full-text

Room‐temperature continuous‐wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97961 ◽

1987 ◽

Vol 50 (16) ◽

pp. 1033-1034 ◽

Cited By ~ 25

Author(s):

M. Ikeda ◽

A. Toda ◽

K. Nakano ◽

Y. Mori ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Continuous Wave Operation ◽

Metalorganic Chemical ◽

Multiquantum Well

Download Full-text

Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating

Applied Physics Letters ◽

10.1063/1.103519 ◽

1990 ◽

Vol 57 (12) ◽

pp. 1179-1181 ◽

Cited By ~ 38

Author(s):

T. Egawa ◽

H. Tada ◽

Y. Kobayashi ◽

T. Soga ◽

T. Jimbo ◽

...

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Si Substrates ◽

Low Threshold ◽

Room Temperature Operation

Download Full-text

Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4197 ◽

2003 ◽

Vol 42 (Part 1, No. 7A) ◽

pp. 4197-4202 ◽

Cited By ~ 9

Author(s):

Youji Yamashita ◽

Hitoshi Tamura ◽

Naochika Horio ◽

Hitoshi Sato ◽

Kazuyoshi Taniguchi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Flow Reactor ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Light Emitting ◽

Split Flow ◽

Metalorganic Chemical

Download Full-text

High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.281798 ◽

1994 ◽

Vol 6 (4) ◽

pp. 468-470 ◽

Cited By ~ 11

Author(s):

H. Zhao ◽

M.H. MacDougal ◽

N.C. Frateschi ◽

S. Siala ◽

P.D. Dapkus ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Single Step ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

Download Full-text

Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett.53, 495 (1988)]

Applied Physics Letters ◽

10.1063/1.102211 ◽

1989 ◽

Vol 55 (16) ◽

pp. 1689-1689 ◽

Cited By ~ 4

Author(s):

Michio Sato ◽

Yoshiji Horikoshi

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Metalorganic Chemical

Download Full-text

Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

10.1117/12.304463 ◽

1998 ◽

Cited By ~ 2

Author(s):

Manijeh Razeghi ◽

Adam W. Saxler ◽

Patrick Kung ◽

Danielle Walker ◽

Xiaolong Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical ◽

Room Temperature Operation ◽

Multiquantum Well

Download Full-text

Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90753 ◽

1979 ◽

Vol 34 (4) ◽

pp. 265-267 ◽

Cited By ~ 51

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

R. Chin ◽

N. Holonyak ◽

S. W. Kirchoefer

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Laser Operation ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

Download Full-text