Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition
1994 ◽
Vol 6
(4)
◽
pp. 468-470
◽
1994 ◽
2007 ◽
1994 ◽
Vol 6
(11)
◽
pp. 1289-1292
◽
1991 ◽
Vol 30
(Part 2, No. 10B)
◽
pp. L1781-L1783
◽