Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

1979 ◽  
Vol 34 (4) ◽  
pp. 265-267 ◽  
Author(s):  
R. D. Dupuis ◽  
P. D. Dapkus ◽  
R. Chin ◽  
N. Holonyak ◽  
S. W. Kirchoefer
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