Variation of threshold current with cavity length in strained‐layer InGaAs/GaAs quantum well lasers

1991 ◽  
Vol 69 (4) ◽  
pp. 1882-1891 ◽  
Author(s):  
Johnson Lee ◽  
C. Shieh ◽  
M. O. Vassell
Keyword(s):  
Quantum Well ◽  
Cavity Length ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Strained Layer

Characteristics and Growth of Strained-Layer InGaAs/GaInAsP/GaInP Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Näppi ◽  
H. Asonen
Keyword(s):  
Quantum Well ◽  
Internal Quantum Efficiency ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Field Pattern ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Waveguide Loss ◽  
Far Field Pattern

ABSTRACTStrained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.

Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Modulation Doping ◽  
Strained Layer ◽  
Low Threshold

Cavity length dependence of threshold current for quantum well lasers

1989 ◽  
Vol 54 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
C. Shieh ◽  
R. Engelmann ◽  
J. Mantz ◽  
K. Alavi ◽  
C. Shu
Keyword(s):  
Quantum Well ◽  
Cavity Length ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Length Dependence
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