Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers

1989 ◽  
Vol 54 (25) ◽  
pp. 2521-2523 ◽  
Author(s):  
C. Shieh ◽  
J. Mantz ◽  
H. Lee ◽  
D. Ackley ◽  
R. Engelmann
1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Näppi ◽  
H. Asonen

ABSTRACTStrained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.


1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta

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