Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

R. Nagarajan; T. Kamiya; A. Kurobe

doi:10.1109/3.29242

Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

IEEE Journal of Quantum Electronics ◽

10.1109/3.29242 ◽

1989 ◽

Vol 25 (6) ◽

pp. 1161-1170 ◽

Cited By ~ 47

Author(s):

R. Nagarajan ◽

T. Kamiya ◽

A. Kurobe

Keyword(s):

Threshold Current ◽

Band Filling ◽

Multiquantum Well

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Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.90008 ◽

1991 ◽

Vol 27 (6) ◽

pp. 1804-1811 ◽

Cited By ~ 67

Author(s):

M. Rosenzweig ◽

M. Mohrle ◽

H. Duser ◽

H. Venghaus

Keyword(s):

Threshold Current ◽

Current Analysis ◽

Multiquantum Well

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1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density

Applied Physics Letters ◽

10.1063/1.114532 ◽

1995 ◽

Vol 67 (4) ◽

pp. 449-451 ◽

Cited By ~ 1

Author(s):

H. Shimizu ◽

T. Fukushima ◽

K. Nishikata ◽

Y. Hirayama ◽

M. Irikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Differential Gain ◽

Low Threshold ◽

Multiquantum Well

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Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.878 ◽

2007 ◽

Vol 7 (12) ◽

pp. 4443-4446 ◽

Cited By ~ 1

Author(s):

Jin Soo Kim ◽

Cheul-Ro Lee ◽

Kyeong Won Seol ◽

Dae Kon Oh

Keyword(s):

Quantum Dot ◽

Room Temperature ◽

Threshold Current ◽

Threshold Current Density ◽

Wavelength Shift ◽

Material System ◽

Quantum Dot Lasers ◽

Lasing Wavelength ◽

Band Filling ◽

Inas Quantum Dot

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.

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Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm

IEEE Photonics Technology Letters ◽

10.1109/68.59326 ◽

1990 ◽

Vol 2 (9) ◽

pp. 609-611 ◽

Cited By ~ 5

Author(s):

B. Stegmuller ◽

R. Gessner ◽

M. Beschorner ◽

G. Franz ◽

D. Sacher ◽

...

Keyword(s):

Threshold Current ◽

Ridge Waveguide ◽

Waveguide Lasers ◽

Low Threshold ◽

Ridge Waveguide Lasers ◽

Multiquantum Well

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Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers

IEEE Photonics Technology Letters ◽

10.1109/68.681481 ◽

1998 ◽

Vol 10 (6) ◽

pp. 778-780 ◽

Cited By ~ 5

Author(s):

P. Bhattacharya ◽

Y. Yuan ◽

T. Brock ◽

C. Caneau ◽

R. Bhat

Keyword(s):

Temperature Dependence ◽

Threshold Current ◽

Distributed Feedback ◽

Distributed Feedback Lasers ◽

Multiquantum Well

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Low threshold current 1.6 µm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

Electronics Letters ◽

10.1049/el:19940684 ◽

1994 ◽

Vol 30 (12) ◽

pp. 973-975 ◽

Cited By ~ 28

Author(s):

I. F. Lealman ◽

L. J. Rivers ◽

C. P. Seltzer ◽

S. D. Perrin ◽

M. J. Harlow

Keyword(s):

Active Layer ◽

Threshold Current ◽

Low Threshold ◽

Multiquantum Well

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Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm

Electronics Letters ◽

10.1049/el:19920089 ◽

1992 ◽

Vol 28 (2) ◽

pp. 144 ◽

Cited By ~ 37

Author(s):

A. Valster ◽

C.J. van der Poel ◽

M.N. Finke ◽

M.J.B. Boermans

Keyword(s):

Current Density ◽

High Power ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold ◽

Multiquantum Well

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Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

Electronics Letters ◽

10.1049/el:19920096 ◽

1992 ◽

Vol 28 (2) ◽

pp. 154 ◽

Cited By ~ 10

Author(s):

J.W. Xiao ◽

J.Y. Xu ◽

G.W. Yang ◽

J.M. Zhang ◽

Z.T. Xu ◽

...

Keyword(s):

Threshold Current ◽

Buried Heterostructure ◽

Low Threshold ◽

Multiquantum Well

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High temperature characteristic T0 and low threshold current density of 1.3 µm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

Electronics Letters ◽

10.1049/el:19950567 ◽

1995 ◽

Vol 31 (10) ◽

pp. 803-805 ◽

Cited By ~ 25

Author(s):

A. Ougazzaden ◽

C. Kazmierski ◽

A. Mircea

Keyword(s):

High Temperature ◽

Current Density ◽

Temperature Characteristic ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold ◽

Multiquantum Well

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Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substrates

Electronics Letters ◽

10.1049/el:19910814 ◽

1991 ◽

Vol 27 (14) ◽

pp. 1301 ◽

Cited By ~ 10

Author(s):

A. Kikuchi ◽

K. Kishino ◽

Y. Kaneko

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Gas Source ◽

Gaas Substrates ◽

Multiquantum Well

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