High temperature characteristic T0 and low threshold current density of 1.3 µm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

1995 ◽  
Vol 31 (10) ◽  
pp. 803-805 ◽  
Author(s):  
A. Ougazzaden ◽  
C. Kazmierski ◽  
A. Mircea
Keyword(s):  
High Temperature ◽  
Current Density ◽  
Temperature Characteristic ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
Multiquantum Well

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Modulation Doping ◽  
Low Threshold

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity
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