Low threshold current 1.6 µm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

1994 ◽  
Vol 30 (12) ◽  
pp. 973-975 ◽  
Author(s):  
I. F. Lealman ◽  
L. J. Rivers ◽  
C. P. Seltzer ◽  
S. D. Perrin ◽  
M. J. Harlow
Keyword(s):  
Active Layer ◽  
Threshold Current ◽  
Low Threshold ◽  
Multiquantum Well

Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

1992 ◽  
Vol 28 (2) ◽  
pp. 154 ◽  
Author(s):  
J.W. Xiao ◽  
J.Y. Xu ◽  
G.W. Yang ◽  
J.M. Zhang ◽  
Z.T. Xu ◽  
...  
Keyword(s):  
Threshold Current ◽  
Buried Heterostructure ◽  
Low Threshold ◽  
Multiquantum Well

Low-threshold-current 670 nm multiquantum-well laser diodes

1994 ◽  
Vol 30 (25) ◽  
pp. 2140-2142 ◽  
Author(s):  
H. Fujii ◽  
H. Makita ◽  
H. Yoshii ◽  
H. Yamada ◽  
T. Kishi ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Threshold Current ◽  
Low Threshold ◽  
Multiquantum Well

Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

1986 ◽  
Vol 22 (15) ◽  
pp. 802 ◽  
Author(s):  
H. Burkhard ◽  
E. Kuphal ◽  
H.W. Dinges
Keyword(s):  
Threshold Current ◽  
Second Order ◽  
Low Threshold

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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