Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

J.W. Xiao; J.Y. Xu; G.W. Yang; J.M. Zhang; Z.T. Xu; L.H. Chen

doi:10.1049/el:19920096

Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

Electronics Letters ◽

10.1049/el:19920096 ◽

1992 ◽

Vol 28 (2) ◽

pp. 154 ◽

Cited By ~ 10

Author(s):

J.W. Xiao ◽

J.Y. Xu ◽

G.W. Yang ◽

J.M. Zhang ◽

Z.T. Xu ◽

...

Keyword(s):

Threshold Current ◽

Buried Heterostructure ◽

Low Threshold ◽

Multiquantum Well

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1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density

Applied Physics Letters ◽

10.1063/1.114532 ◽

1995 ◽

Vol 67 (4) ◽

pp. 449-451 ◽

Cited By ~ 1

Author(s):

H. Shimizu ◽

T. Fukushima ◽

K. Nishikata ◽

Y. Hirayama ◽

M. Irikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Differential Gain ◽

Low Threshold ◽

Multiquantum Well

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Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm

IEEE Photonics Technology Letters ◽

10.1109/68.59326 ◽

1990 ◽

Vol 2 (9) ◽

pp. 609-611 ◽

Cited By ~ 5

Author(s):

B. Stegmuller ◽

R. Gessner ◽

M. Beschorner ◽

G. Franz ◽

D. Sacher ◽

...

Keyword(s):

Threshold Current ◽

Ridge Waveguide ◽

Waveguide Lasers ◽

Low Threshold ◽

Ridge Waveguide Lasers ◽

Multiquantum Well

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Low threshold current implanted‐planar buried‐heterostructure graded‐index separate confinement heterostructure laser in GaAs/AlGaAs

Applied Physics Letters ◽

10.1063/1.103030 ◽

1990 ◽

Vol 56 (20) ◽

pp. 1945-1947 ◽

Cited By ~ 9

Author(s):

G. Allen Vawter ◽

D. R. Myers ◽

Tom M. Brennan ◽

B. E. Hammons

Keyword(s):

Threshold Current ◽

Graded Index ◽

Heterostructure Laser ◽

Buried Heterostructure ◽

Low Threshold

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Low threshold current 1.6 µm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

Electronics Letters ◽

10.1049/el:19940684 ◽

1994 ◽

Vol 30 (12) ◽

pp. 973-975 ◽

Cited By ~ 28

Author(s):

I. F. Lealman ◽

L. J. Rivers ◽

C. P. Seltzer ◽

S. D. Perrin ◽

M. J. Harlow

Keyword(s):

Active Layer ◽

Threshold Current ◽

Low Threshold ◽

Multiquantum Well

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Low threshold current CW operation of GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser emitting at 1.5–1.6 μm

Electronics Letters ◽

10.1049/el:19810675 ◽

1981 ◽

Vol 17 (25-26) ◽

pp. 967 ◽

Cited By ~ 18

Author(s):

T. Tanbun-ek ◽

S. Arai ◽

F. Koyama ◽

K. Kishino ◽

S. Yoshizawa ◽

...

Keyword(s):

Threshold Current ◽

Bragg Reflector ◽

Distributed Bragg Reflector ◽

Cw Operation ◽

Buried Heterostructure ◽

Low Threshold

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Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm

Electronics Letters ◽

10.1049/el:19920089 ◽

1992 ◽

Vol 28 (2) ◽

pp. 144 ◽

Cited By ~ 37

Author(s):

A. Valster ◽

C.J. van der Poel ◽

M.N. Finke ◽

M.J.B. Boermans

Keyword(s):

Current Density ◽

High Power ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold ◽

Multiquantum Well

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Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

Electronics Letters ◽

10.1049/el:19921160 ◽

1992 ◽

Vol 28 (19) ◽

pp. 1819 ◽

Cited By ~ 15

Author(s):

C.P. Seltzer ◽

S.D. Perrin ◽

P.C. Spurdens

Keyword(s):

Output Power ◽

Threshold Current ◽

High Output Power ◽

Buried Heterostructure ◽

Low Threshold ◽

High Output

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Low threshold current planar buried heterostructure lasers with close spatial and large spectral separation

Proceedings of LEOS '93 ◽

10.1109/leos.1993.379249 ◽

2002 ◽

Author(s):

R.L. Thornton ◽

K.J. Beernink ◽

H.F. Chung

Keyword(s):

Threshold Current ◽

Spectral Separation ◽

Buried Heterostructure ◽

Low Threshold

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High temperature characteristic T0 and low threshold current density of 1.3 µm InAsP/InGaP/InP compensated strain multiquantum well structure lasers

Electronics Letters ◽

10.1049/el:19950567 ◽

1995 ◽

Vol 31 (10) ◽

pp. 803-805 ◽

Cited By ~ 25

Author(s):

A. Ougazzaden ◽

C. Kazmierski ◽

A. Mircea

Keyword(s):

High Temperature ◽

Current Density ◽

Temperature Characteristic ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold ◽

Multiquantum Well

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Very Low Threshold Current OMCVD Grown AiGaInAs Buried Heterostructure Quantum Well A Novel Etching Technique

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics ◽

10.1109/leosst.1991.638948 ◽

2005 ◽

Author(s):

A. Kasukawa ◽

R. Bhat ◽

C. Caneau ◽

N. Andreadakis ◽

B. Pathak ◽

...

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Etching Technique ◽

Buried Heterostructure ◽

Low Threshold

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