InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

1989 ◽  
Vol 54 (6) ◽  
pp. 499-501 ◽  
Author(s):  
P. K. York ◽  
K. J. Beernink ◽  
G. E. Fernández ◽  
J. J. Coleman
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