A low dark current, high-speed GaAs/Al/sub 0.3/Ga/sub 0.7/As heterostructure Schottky barrier photodiode

1989 ◽  
Vol 25 (5) ◽  
pp. 858-861 ◽  
Author(s):  
D.H. Lee ◽  
S.S. Li ◽  
N.G. Paulter
1983 ◽  
Vol 30 (11) ◽  
pp. 1611-1612 ◽  
Author(s):  
S.Y. Wang ◽  
D.M. Bloom ◽  
D.M. Collins

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.


1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L180-L182 ◽  
Author(s):  
Youichi Sekiguchi ◽  
Tohru Kuwahara ◽  
Fumihiko Kobayashi ◽  
Shinji Iio

2016 ◽  
Vol 119 (21) ◽  
pp. 213105 ◽  
Author(s):  
H. Chen ◽  
P. Verheyen ◽  
P. De Heyn ◽  
G. Lepage ◽  
J. De Coster ◽  
...  

2003 ◽  
Vol 50 (5) ◽  
pp. 1306-1313 ◽  
Author(s):  
Cha-Shin Lin ◽  
Yun-Chen Chang ◽  
Rong-Hwei Yeh ◽  
Jyh-Wong Hong

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