High-Speed InGaAs/InAlAs Avalanche Photodiode with Low Dark Current

2020 ◽  
Author(s):  
Rui Wang ◽  
Xiaohong Yang ◽  
Hui Wang ◽  
Tingting He
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Avalanche Photodiode

Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode With Dual Charge Layers for High-Speed and Low Dark Current Performances

2018 ◽  
Vol 24 (2) ◽  
pp. 1-8 ◽  
Author(s):  
Yi-Han Chen ◽  
Emin Chou ◽  
Jin-Wei Shi ◽  
Jhih-Min Wun ◽  
Song-Lin Wu ◽  
...  
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Avalanche Photodiode

scholarly journals InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation

2015 ◽  
Vol 27 (16) ◽  
pp. 1745-1748 ◽  
Author(s):  
Shiyu Xie ◽  
Shiyong Zhang ◽  
Chee Hing Tan
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Avalanche Photodiode

scholarly journals Inverted p-down Design for High-Speed Photodetectors

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Communications ◽  
High Speed ◽  
Pulse Amplitude ◽  
Avalanche Photodiode ◽  
Device Fabrication ◽  
Pulse Amplitude Modulation ◽  
Optical Coupling ◽  
Pin Photodiodes

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

1982 ◽  
Vol 18 (22) ◽  
pp. 945 ◽  
Author(s):  
Y. Matsushima ◽  
S. Akiba ◽  
K. Sakai ◽  
Y. Kushiro ◽  
Y. Noda ◽  
...  
Keyword(s):  
High Speed ◽  
Avalanche Photodiode ◽  
Buffer Layers ◽  
Speed Response

scholarly journals High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

2018 ◽  
Vol E101.C (7) ◽  
pp. 574-580
Author(s):  
Koichi IIYAMA ◽  
Takeo MARUYAMA ◽  
Ryoichi GYOBU ◽  
Takuya HISHIKI ◽  
Toshiyuki SHIMOTORI
Keyword(s):  
High Speed ◽  
Wavelength Region ◽  
Avalanche Photodiode ◽  
Cmos Process ◽  
High Responsivity ◽  
Standard Cmos Process ◽  
Blue Wavelength

scholarly journals Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

2016 ◽  
Vol 119 (21) ◽  
pp. 213105 ◽  
Author(s):  
H. Chen ◽  
P. Verheyen ◽  
P. De Heyn ◽  
G. Lepage ◽  
J. De Coster ◽  
...  
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Current Analysis
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