scholarly journals Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

2016 ◽  
Vol 119 (21) ◽  
pp. 213105 ◽  
Author(s):  
H. Chen ◽  
P. Verheyen ◽  
P. De Heyn ◽  
G. Lepage ◽  
J. De Coster ◽  
...  
2021 ◽  
Author(s):  
Soumen Dhara ◽  
Kham Niang ◽  
Andrew Flewitt ◽  
Arokia Nathan ◽  
Stephen Lynch

Abstract We report on a strong persistent photoconductivity (PPC) induced appearance of conductor‑like behaviour in zinc-tin-oxide (ZTO) photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared by remote-plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~10-4 A (a photo-to-dark current ratio of ~107) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits strong PPC with long-lasting recovery time, which leads the appearance of the conductor‑like behaviour in ZTO semiconductor. In the present case, the conductivity changes over six orders of magnitude, from ~10-7 to 0.92 Ω-1cm-1. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep-states and tail-states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-gap tail-states of the ZTO in the strong PPC, while deep-states contribute to mild PPC.


2003 ◽  
Vol 50 (5) ◽  
pp. 1306-1313 ◽  
Author(s):  
Cha-Shin Lin ◽  
Yun-Chen Chang ◽  
Rong-Hwei Yeh ◽  
Jyh-Wong Hong

1993 ◽  
Vol 8 (5) ◽  
pp. 700-704 ◽  
Author(s):  
Haoxin Yuan ◽  
Xiuzhen Yang ◽  
Feiming Tong

1997 ◽  
Vol 477 ◽  
Author(s):  
S. A. Tabatabaei ◽  
G. A. Porkolab ◽  
S. Agarwala ◽  
F. G. Johnson ◽  
S. A. Merritt ◽  
...  

ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.


Author(s):  
Tianpeng Fan ◽  
Zhe Sun ◽  
Xiaoshen Zhang ◽  
Xunshi Yan ◽  
Jingjing Zhao ◽  
...  

Active magnetic bearing technology is used more and more for its high performance, such as high speed and frictionless operation. But the rotor vibrates sometimes during operation due to the existence of residual unbalanced mass, which may affect the security of the whole system. In order to determine the distribution of residual unbalanced mass, this paper proposes a method based on frequency response, control current analysis, and image data processing. The theoretical and calculated results show the validity of the method.


Sign in / Sign up

Export Citation Format

Share Document