Modeling and diagnostic of an SF/sub 6/ RF plasma at low pressure

2000 ◽  
Vol 28 (1) ◽  
pp. 278-287 ◽  
Author(s):  
C. Riccardi ◽  
R. Barni ◽  
F. de Colle ◽  
M. Fontanesi
Keyword(s):  
Low Pressure ◽  
Rf Plasma

scholarly journals Uses of radio emission spectroscopy for non-contact and in situ diagnostics of low pressure radio frequency plasma processing

2021 ◽  
Author(s):  
Rajani K. Vijayaraghavan ◽  
Sean Kelly ◽  
David Coates ◽  
Cezar Gaman ◽  
Niall MacGearailt ◽  
...  
Keyword(s):  
Radio Emission ◽  
Radio Frequency ◽  
Emission Spectroscopy ◽  
Near Field ◽  
Plasma Processing ◽  
Diagnostic Technique ◽  
Primary Source ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Rf Plasma

Abstract We demonstrate that a passive non-contact diagnostic technique, radio emission spectroscopy (RES), provides a sensitive monitor of currents in a low pressure radio frequency (RF) plasma. A near field magnetic loop antenna was used to capture RF emissions from the plasma without perturbing it. The analysis was implemented for a capacitively coupled RF plasma with an RF supply at a frequency of 13.56 MHz. Real-time measurements are captured in scenarios relevant to contemporary challenges faced during semiconductor fabrication (e.g. window coating and wall disturbance). Exploration of the technique for key equipment parameters including applied RF power, chamber pressure, RF bias frequencies and chamber wall cleanliness shows sensitive and repeatable function. In particular, the induced RES signal was found to vary sensitively to pressure changes and we were able to detect pressure and power variations as low as ~2.5 %/mtorr and ~3.5 %/watt, respectively, during the plasma processing during a trial generic plasma process. Finally, we explored the ability of RES to monitor the operation of a multiple frequency low-pressure RF plasma system (f1 = 2 MHz, f2 = 162 MHz) and intermixing products which suggests strongly that the plasma sheaths are the primary source of this non-linear diode mixing effect.

Treatment Characteristics of Second Order Structure of Proteins Using Low-Pressure Oxygen RF Plasma

2010 ◽  
Author(s):  
Nobuya Hayashi ◽  
Akari Nakahigashi ◽  
Ryutaro Kawaguchi ◽  
Masaaki Goto ◽  
Akira Kobayashi ◽  
...  
Keyword(s):  
Low Pressure ◽  
Second Order ◽  
Rf Plasma ◽  
Order Structure ◽  
Pressure Oxygen ◽  
Treatment Characteristics ◽  
Structure Of Proteins

In situ XPS analysis of the electronic structure of silicon and titanium thin films exposed to low-pressure inductively-coupled RF plasma

2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Low Pressure ◽  
Rf Plasma ◽  
Xps Analysis ◽  
Inductively Coupled ◽  
In Situ Xps ◽  
Titanium Thin Films

Absolute number densities of vibrationally excited ) produced in a low pressure rf plasma

2006 ◽  
Vol 39 (9) ◽  
pp. 1846-1852 ◽  
Author(s):  
G Hancock ◽  
R Peverall ◽  
G A D Ritchie ◽  
L J Thornton
Keyword(s):  
Low Pressure ◽  
Absolute Number ◽  
Rf Plasma ◽  
Vibrationally Excited

Effect of RF or VHF Plasma on Nanocrystalline Silicon Thin Film Structure: Insight from OES and Langmuir Probe Measurements

2013 ◽  
Vol 1536 ◽  
pp. 161-166
Author(s):  
Lala Zhu ◽  
Ujjwal K Das ◽  
Steven S Hegedus ◽  
Robert W Birkmire
Keyword(s):  
Grain Size ◽  
Langmuir Probe ◽  
Volume Fraction ◽  
Nanocrystalline Silicon ◽  
Low Pressure ◽  
High Energy ◽  
Rf Plasma ◽  
Crystalline Volume Fraction ◽  
Langmuir Probe Measurements ◽  
Probe Measurements

ABSTRACTOptical emission spectroscopy (OES) and Langmuir Probe were used to characterize RF and VHF plasma properties under conditions leading to nanocrystalline silicon film deposition. Films deposited by RF plasma at low pressure (3 Torr), even with high crystalline volume fraction, show weak X-ray diffraction signals, suggesting small grain size, while RF films at higher pressure (8 Torr) and VHF films at both high and low pressure have larger grain sizes. The preferential growth orientation is controlled by the H2/SiH4 ratio with RF plasma, while the film deposited by VHF shows primarily (220) orientation independent of H-dilution ratio. Langmuir Probe measurements indicate that the high energy electron population is reduced by increasing pressure from 3 Torr to 8 Torr in RF plasma. Compared with RF plasma, the VHF plasma shows higher electron density and sheath potential, but lower average electron energy, which may be responsible for the larger grain size and crystal orientation. The growth rate and crystalline volume fraction of the film is correlated with OES intensity ratio of SiH* and Hα/SiH* for both RF and VHF plasmas.

Cracking of selected hydrocarbon gases in a low-power, low-pressure RF plasma

2011 ◽  
Vol 20 (1) ◽  
pp. 015013
Author(s):  
Charles Q Jiao ◽  
Biswa N Ganguly ◽  
Alan Garscadden
Keyword(s):  
Low Power ◽  
Low Pressure ◽  
Rf Plasma ◽  
Hydrocarbon Gases

Observation of a magnetized low‐pressure rf plasma for thin‐film preparation

1991 ◽  
Vol 69 (1) ◽  
pp. 146-150 ◽  
Author(s):  
Yoshihiro Okuno ◽  
Shinya Yagura ◽  
Hiroharu Fujita
Keyword(s):  
Thin Film ◽  
Low Pressure ◽  
Rf Plasma ◽  
Thin Film Preparation ◽  
Film Preparation
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