A model of radiation induced leakage current (RILC) in ultra-thin gate oxides

1999 ◽  
Vol 46 (6) ◽  
pp. 1553-1561 ◽  
Author(s):  
L. Larcher ◽  
A. Paccagnella ◽  
M. Ceschia ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Radiation Induced

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

1998 ◽  
Vol 45 (6) ◽  
pp. 2375-2382 ◽  
Author(s):  
M. Ceschia ◽  
A. Paccagnella ◽  
A. Cester ◽  
A. Scarpa ◽  
G. Ghidini
Keyword(s):  
Leakage Current ◽  
Gate Oxides ◽  
Radiation Induced ◽  
Stress Induced Leakage Current

Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides

1999 ◽  
Vol 39 (2) ◽  
pp. 221-226 ◽  
Author(s):  
M. Ceschia ◽  
A. Paccagnella ◽  
A. Scarpa ◽  
A. Cester ◽  
G. Ghidini
Keyword(s):  
Total Dose ◽  
Leakage Current ◽  
Dose Dependence ◽  
Gate Oxides ◽  
Radiation Induced

Ionizing radiation induced leakage current on ultra-thin gate oxides

1997 ◽  
Vol 44 (6) ◽  
pp. 1818-1825 ◽  
Author(s):  
A. Scarpa ◽  
A. Paccagnella ◽  
F. Montera ◽  
G. Ghibaudo ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Leakage Current ◽  
Gate Oxides ◽  
Radiation Induced

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
B. L. Buchanan
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Solid Phase ◽  
Substantial Reduction ◽  
Interface Region ◽  
Radiation Environment ◽  
Solid Phase Epitaxy ◽  
Defect Reduction ◽  
Radiation Induced

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.

Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides

2000 ◽  
Vol 87 (1) ◽  
pp. 498-501 ◽  
Author(s):  
C. Gerardi ◽  
M. Melanotte ◽  
S. Lombardo ◽  
M. Alessandri ◽  
B. Crivelli ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Oxides

Stress induced leakage current in ultra-thin gate oxides after constant current stress

1997 ◽  
Vol 36 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
A. Scarpa ◽  
G. Ghibaudo ◽  
G. Ghidini ◽  
G. Pananakakis ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Constant Current ◽  
Gate Oxides ◽  
Current Stress ◽  
Stress Induced Leakage Current

Radiation-induced off-state leakage current in commercial power MOSFETs

2005 ◽  
Vol 52 (6) ◽  
pp. 2378-2386 ◽  
Author(s):  
J.A. Felix ◽  
M.R. Shaneyfelt ◽  
P.E. Dodd ◽  
B.L. Draper ◽  
J.R. Schwank ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Mosfets ◽  
Radiation Induced
Sign in / Sign up

Export Citation Format

Share Document