Electron tunneling into 1-2-3 HTSC thin films

J. Geerk; R.-L. Wang; H.-C. Li; G. Linker; O. Meyer; F. Ratzel; R. Smithey; H. Keschtkar

doi:10.1109/20.133864

Electron tunneling into 1-2-3 HTSC thin films

IEEE Transactions on Magnetics ◽

10.1109/20.133864 ◽

1991 ◽

Vol 27 (2) ◽

pp. 3085-3089 ◽

Cited By ~ 9

Author(s):

J. Geerk ◽

R.-L. Wang ◽

H.-C. Li ◽

G. Linker ◽

O. Meyer ◽

...

Keyword(s):

Thin Films ◽

Electron Tunneling ◽

Htsc Thin Films

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Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

Materials Horizons ◽

10.1039/c8mh00402a ◽

2018 ◽

Vol 5 (4) ◽

pp. 715-726 ◽

Cited By ~ 17

Author(s):

Viet Huong Nguyen ◽

Ulrich Gottlieb ◽

Anthony Valla ◽

Delfina Muñoz ◽

Daniel Bellet ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Grain Boundaries ◽

Electron Tunneling ◽

Transparent Conductive Oxides ◽

New Model ◽

Polycrystalline Semiconductors

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.

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Electron Tunneling into Y1Ba2Cu3O7 Thin Films

Springer Series in Solid-State Sciences - Electronic Properties of High-Tc Superconductors and Related Compounds ◽

10.1007/978-3-642-84345-7_17 ◽

1990 ◽

pp. 79-83

Author(s):

J. Geerk ◽

G. Linker ◽

O. Meyer ◽

Q. Li ◽

R.-L. Wang ◽

...

Keyword(s):

Thin Films ◽

Electron Tunneling

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Depth profiling of HTSC thin films by secondary neutral mass spectrometry

Superconductors, Surfaces and Superlattices ◽

10.1016/b978-1-4832-8382-1.50133-6 ◽

1994 ◽

pp. 545-548

Author(s):

H. Börner ◽

M. Lorenz ◽

H. Hochmuth ◽

K. Unger

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Depth Profiling ◽

Htsc Thin Films

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Effects of Geometry and Dimensionality on the Magnetic Response of HTSC Thin Films

Advances in Superconductivity XI ◽

10.1007/978-4-431-66874-9_128 ◽

1999 ◽

pp. 559-564

Author(s):

Th. Herzog ◽

H. A. Radovan ◽

P. Ziemann

Keyword(s):

Thin Films ◽

Magnetic Response ◽

Htsc Thin Films

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Application of HTSC-thin films in microwave integrated delay lines

1991 IEEE Aerospace Applications Conference Digest ◽

10.1109/aero.1991.154535 ◽

2002 ◽

Author(s):

A.R. Jha

Keyword(s):

Thin Films ◽

Delay Lines ◽

Htsc Thin Films

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Applications of HTSC thin films with low microwave losses to linear devices

Physica C Superconductivity ◽

10.1016/0921-4534(91)90677-q ◽

1991 ◽

Vol 180 (1-4) ◽

pp. 259-266 ◽

Cited By ~ 7

Author(s):

Heinz Chaloupka ◽

Günter Müller

Keyword(s):

Thin Films ◽

Microwave Losses ◽

Htsc Thin Films

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Three-tunnel-capacitor model for single-electron tunneling in layered thin films

Physical Review B ◽

10.1103/physrevb.50.3342 ◽

1994 ◽

Vol 50 (5) ◽

pp. 3342-3349 ◽

Cited By ~ 7

Author(s):

T. G. Miller ◽

R. Reifenberger

Keyword(s):

Thin Films ◽

Electron Tunneling ◽

Single Electron ◽

Single Electron Tunneling

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Electron tunneling and the proximity effect in Pb--Cd thin films

10.2172/7315528 ◽

1976 ◽

Author(s):

J.R. Toplicar

Keyword(s):

Thin Films ◽

Proximity Effect ◽

Electron Tunneling

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MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy

MRS Proceedings ◽

10.1557/proc-474-69 ◽

1997 ◽

Vol 474 ◽

Author(s):

Brian J. Rappoli ◽

William J. DeSisto ◽

Tobin J. Marks ◽

John A. Belot

Keyword(s):

Thin Films ◽

Gas Phase ◽

Uv Spectroscopy ◽

Mixed Metal Oxide ◽

Feedback Control System ◽

Metal Oxide Films ◽

Mocvd Growth ◽

Mocvd Precursor ◽

Htsc Thin Films

ABSTRACTThe glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2•glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperature have been examined by in-situ UV spectroscopy. Also presented are the details of a UV spectrophotometric-based feedback control system designed to maintain constant gas phase concentration of 2,2,6,6-tetramethyl-3,5-heptadionate (thd) precursors, Cu(thd)2 and Y(thd)3, during MOCVD growth of mixed metal oxide films.

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