Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

2018 ◽  
Vol 5 (4) ◽  
pp. 715-726 ◽  
Author(s):  
Viet Huong Nguyen ◽  
Ulrich Gottlieb ◽  
Anthony Valla ◽  
Delfina Muñoz ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Boundaries ◽  
Electron Tunneling ◽  
Transparent Conductive Oxides ◽  
New Model ◽  
Polycrystalline Semiconductors

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.

Thermoelectric properties of PbTe thin films prepared by gas evaporation method

1999 ◽  
Vol 14 (1) ◽  
pp. 209-212 ◽  
Author(s):  
Masatoshi Ito ◽  
Won-Son Seo ◽  
Kunihito Koumoto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Evaporation Method

PbTe thin films with fine grains were successfully fabricated by the gas evaporation method. Thermoelectric properties, i.e., Seebeck coefficient and electrical conductivity, both decreased with decreasing grain size. This was attributed to the decrease in carrier mobility exceeding the increase in carrier concentration with decreasing grain size. It was clarified that the effects of grain boundaries and of oxidation on carrier mobility are considerably large.

scholarly journals Optical and Electrical Properties of Graphite Thin Films Prepared by Different Methods

2020 ◽  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electron Beam ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Electron Beam Evaporation ◽  
Specific Electrical Conductivity ◽  
Simultaneous Increase ◽  
Optical And Electrical Properties

The paper reports on the structural, optical and electrical properties of graphite thin films prepared by two methods: the vacuum-free method "Pencil-on-semiconductor" and via the electron beam evaporation. Graphite thin films prepared by the non-vacuum method has annealed at a temperature of 920K.The transmission spectra of the investigated graphite films and the electrical properties of these thin films were measured at T = 300 K. The value of the height of barriers Eb at the grain boundaries and the temperature dependence of the electrical conductivity in the range ln(σ·T1/2) = f(103/T) were determined, It is established that the height of the barrier at the grain boundaries for the drawn graphite films is Eb = 0.03 eV, for annealed Eb = 0.01 eV and for the graphite films deposited by the electron beam evaporation Eb = 0.04 eV, ie for annealed film the barrier height is the smallest. It is shown that graphite films deposited by the electron beam evaporation reveals the highest transmittance (T550 ≈ 60%), and the transmission of drawn films is the lowest, annealing leads to its increase. The minimum values ​​of transmission at a wavelength λ = 250nm are due to the scattering of light at the defects that are formed at the grain boundaries. Annealed graphite films have been found to possess the best structural perfection because they have the lowest resistivity compared to non-annealed films and electron-beam films and have the lowest barrier height. Simultaneous increase of transmission in the whole spectral range, increase of specific electrical conductivity and decrease of potential barrier at grain boundaries of the annealed drawn graphite film clearly indicate ordering of drawn graphite flakes transferred onto anew substrate, which led to the reduction of light scattering and the improvement of charge transport due to the larger area of ​​overlap between graphite flakes.

Reversible Force-Resistivity Behavior of Thin Films of the TTF-Tcnq Family

1996 ◽  
Vol 436 ◽  
Author(s):  
W. Vollmann ◽  
H.-U. Sonntag
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Potential Barrier ◽  
Film Plane ◽  
Barrier Width ◽  
Dependent Potential ◽  
Sample Resistance

AbstractThe electrical properties of vacuum sublimed thin films of TTF-TCNQ and its derivatives mainly are determined by electron barriers at grain boundaries. The electrical conductivity is thermal activated and exhibits a significant dependence on a force acting perpenticularly to the film plane. The sample resistance R decreases continiously with increasing force F. TCNQ thin films on steel show a similar R-F relation. The effect has been observed already at forces of 1 N, but also up to about 60 kN. An explanation of these phenomena is given by a grain boundary limited hopping mechanism with pressure dependent potential barrier width and height. Morphology investigations by SEM support the model.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Piezoelectric Response and Polarization-Dependent Conductivity of Grain Boundaries in BiFeO3 Thin Films

2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Piezoelectric Response ◽  
Bifeo3 Thin Films

scholarly journals Electrical conductivity of MoS2 thin films and graphite under continuous injection to protons

2021 ◽  
Vol 1758 (1) ◽  
pp. 012005
Author(s):  
G S Burkhanov ◽  
S A Lachenkov ◽  
M A Kononov ◽  
A U Bashlakov ◽  
D V Prosvirnin
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Continuous Injection
Sign in / Sign up

Export Citation Format

Share Document