Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe

Young-Kyu Kim; Kwan-Sun Yoon; Joong-Sik Kim; Taeyoung Won

doi:10.1166/jnn.2007.002

Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.002 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4084-4088 ◽

Cited By ~ 1

Author(s):

Young-Kyu Kim ◽

Kwan-Sun Yoon ◽

Joong-Sik Kim ◽

Taeyoung Won

Keyword(s):

Plane Strain ◽

Mole Fraction ◽

Kinetic Monte Carlo ◽

Functional Dependence ◽

Silicon Layer ◽

Sige Layer ◽

Boron Diffusion ◽

Strained Si ◽

Germanium Content ◽

Charged Defects

We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.

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Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.18082 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4084-4088

Author(s):

Young-Kyu Kim ◽

Kwan-Sun Yoon ◽

Joong-Sik Kim ◽

Taeyoung Won

Keyword(s):

Plane Strain ◽

Mole Fraction ◽

Kinetic Monte Carlo ◽

Functional Dependence ◽

Silicon Layer ◽

Sige Layer ◽

Boron Diffusion ◽

Strained Si ◽

Germanium Content ◽

Charged Defects

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Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/4/045001 ◽

2013 ◽

Vol 28 (4) ◽

pp. 045001 ◽

Cited By ~ 1

Author(s):

Tae-Hyun Kim ◽

Jea-Gun Park

Keyword(s):

Memory Cell ◽

Sige Layer ◽

Strained Si ◽

Nano Scale

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Boron diffusion in strained Si: A first-principles study

Journal of Applied Physics ◽

10.1063/1.1803630 ◽

2004 ◽

Vol 96 (10) ◽

pp. 5543-5547 ◽

Cited By ~ 6

Author(s):

Li Lin ◽

Taras Kirichenko ◽

Sanjay K. Banerjee ◽

Gyeong S. Hwang

Keyword(s):

First Principles ◽

Boron Diffusion ◽

Strained Si ◽

First Principles Study

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A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2004.09.070 ◽

2005 ◽

Vol 8 (1-3) ◽

pp. 215-218 ◽

Cited By ~ 6

Author(s):

Sun-Ghil Lee ◽

Young Pil Kim ◽

Hye-Lan Lee ◽

Beom Jun Jin ◽

Jong-Wook Lee ◽

...

Keyword(s):

Comparative Analysis ◽

Gate Oxide ◽

Sige Layer ◽

Reliability Prediction ◽

Strained Si

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Kinetic Monte Carlo (KMC) Modeling for Boron Diffusion in Strained Silicon

Journal of the Korean Physical Society ◽

10.3938/jkps.50.1656 ◽

2007 ◽

Vol 50 (6) ◽

pp. 1656

Author(s):

Young-Kyu Kim ◽

Kwan-Sun Yoon ◽

Joong-Sik Kim ◽

Taeyoung Won

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Strained Silicon ◽

Boron Diffusion

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Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing

MRS Proceedings ◽

10.1557/proc-0994-f09-03 ◽

2007 ◽

Vol 994 ◽

Author(s):

Grace Huiqi Wang ◽

Eng-Huat Toh ◽

Chih-Hang Tung ◽

Yong-Lim Foo ◽

S. Tripathy ◽

...

Keyword(s):

Thermal Oxidation ◽

Mole Fraction ◽

Systematic Study ◽

Silicon Germanium ◽

High Mobility ◽

Sige Layer ◽

Strain Engineering ◽

Surface Roughening ◽

Clear Understanding ◽

Strain Evolution

AbstractA novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs.

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Thermal Conductivity of Ultra Thin Single Crystal Silicon Layers: Part II — Experimental Data and Modeling at High Temperatures

Heat Transfer, Volume 2 ◽

10.1115/imece2004-62107 ◽

2004 ◽

Cited By ~ 1

Author(s):

Wenjun Liu ◽

Mehdi Asheghi ◽

K. E. Goodson

Keyword(s):

Experimental Data ◽

Thermal Conductivity ◽

Single Crystal ◽

High Temperatures ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Silicon On Insulator ◽

Boltzmann Transport ◽

Crystal Silicon ◽

Strained Si

Simulations of the temperature field in Silicon-on-Insulator (SOI) and strained-Si transistors can benefit from experimental data and modeling of the thin silicon layer thermal conductivity at high temperatures. This work presents the first experimental data for 20 and 100 nm thick single crystal silicon layers at high temperatures and develops algebraic expressions to account for the reduction in thermal conductivity due to the phonon-boundary scattering for pure and doped silicon layers. The model applies to temperatures range 300–1000 K for silicon layer thicknesses from 10 nm to 1 μm (and even bulk) and agrees well with the experimental data. In addition, the model has an excellent agreement with the predictions of thin film thermal conductivity based on thermal conductivity integral and Boltzmann transport equation, although it is significantly more robust and convenient for integration into device simulators. The experimental data and predictions are required for accurate thermal simulation of the semiconductor devices, nanostructures and in particular the SOI and strained-Si transistors.

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The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

MRS Proceedings ◽

10.1557/proc-810-c8.15 ◽

2004 ◽

Vol 810 ◽

Author(s):

Huda A. W. A. El Mubarek ◽

Yun Wang ◽

Janet M. Bonar ◽

Peter Hemment ◽

Peter Ashburn

Keyword(s):

Thermal Diffusion ◽

Sige Layer ◽

Dislocation Loops ◽

Boron Diffusion ◽

Rich Region ◽

Implantation Energy ◽

Enhanced Diffusion ◽

Partial Relaxation ◽

Transient Enhanced Diffusion ◽

Marker Layer

ABSTRACTThis paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

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