High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

2001 ◽  
Vol 48 (8) ◽  
pp. 1633-1640 ◽  
Author(s):  
M. Takamiya ◽  
T. Hiramoto
1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2483-2486 ◽  
Author(s):  
Makoto Takamiya ◽  
Takuya Saraya ◽  
Tran Ngoc Duyet ◽  
Yuri Yasuda ◽  
Toshiro Hiramoto

2019 ◽  
Vol 14 (1) ◽  
pp. 169-175 ◽  
Author(s):  
Jefferson O. Amaro ◽  
Paula G. Agopian ◽  
João A. Martino

2017 ◽  
Vol 12 (2) ◽  
pp. 101-106
Author(s):  
V. T. Itocazu ◽  
K. R. A. Sasaki ◽  
V. Sonnenberg ◽  
J. A. Martino ◽  
E. Simoen ◽  
...  

This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed analytical model in its simplicity provides a good agreement to the experimental data.


Author(s):  
Keisuke Takahashi ◽  
Arifin Tamsir Putra ◽  
Ken Shimizu ◽  
Toshiro Hiramoto
Keyword(s):  

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