GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

H. Temkin; M. B. Panish; P. M. Petroff; R. A. Hamm; J. M. Vandenberg; S. Sumski

doi:10.1063/1.96178

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.96178 ◽

1985 ◽

Vol 47 (4) ◽

pp. 394-396 ◽

Cited By ~ 88

Author(s):

H. Temkin ◽

M. B. Panish ◽

P. M. Petroff ◽

R. A. Hamm ◽

J. M. Vandenberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures ◽

Gas Source

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.97997 ◽

1987 ◽

Vol 50 (15) ◽

pp. 956-958 ◽

Cited By ~ 65

Author(s):

H. Temkin ◽

S. N. G. Chu ◽

M. B. Panish ◽

R. A. Logan

Keyword(s):

Thermal Stability ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures ◽

Gas Source ◽

Thermal Stability Of

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Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l79 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L79-L82 ◽

Cited By ~ 13

Author(s):

Yuichi Kawamura ◽

Hideki Kobayashi ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586097 ◽

1992 ◽

Vol 10 (2) ◽

pp. 949 ◽

Cited By ~ 6

Author(s):

J. E. Cunningham

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source

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Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.348921 ◽

1991 ◽

Vol 69 (2) ◽

pp. 752-756 ◽

Cited By ~ 19

Author(s):

M. J. Hafich ◽

H. Y. Lee ◽

G. Y. Robinson ◽

D. Li ◽

N. Otsuka

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures ◽

Gas Source

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Gas-Source molecular beam epitaxy and characterization of inGaAs/lnGaAsP quantum well structures on InP

Journal of Electronic Materials ◽

10.1007/bf02659901 ◽

1996 ◽

Vol 25 (7) ◽

pp. 1049-1053

Author(s):

W. G. Bi ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures ◽

Gas Source

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Gas‐source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures

Applied Physics Letters ◽

10.1063/1.104733 ◽

1991 ◽

Vol 58 (25) ◽

pp. 2954-2956 ◽

Cited By ~ 24

Author(s):

H. Q. Hou ◽

C. W. Tu ◽

S. N. G. Chu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source ◽

Highly Strained

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Effect of Strain Compensation on Crystalline Quality for InGaAs/InAlP Strained Multiple Quantum Well Structures on InP Grown by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l156 ◽

1994 ◽

Vol 33 (Part 2, No. 2A) ◽

pp. L156-L158 ◽

Cited By ~ 5

Author(s):

Kouichi Naniwae ◽

Shigeo Sugou ◽

Takayoshi Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Crystalline Quality ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source ◽

Strain Compensation

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Systematic blue shift of exciton luminescence in strained Si1 −s xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxy

Thin Solid Films ◽

10.1016/0040-6090(92)90025-7 ◽

1992 ◽

Vol 222 (1-2) ◽

pp. 1-4 ◽

Cited By ~ 13

Author(s):

S. Fukatsu ◽

H. Yoshida ◽

N. Usami ◽

A. Fujiwara ◽

Y. Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Blue Shift ◽

Exciton Luminescence ◽

Quantum Well Structures ◽

Gas Source

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Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l1319 ◽

1992 ◽

Vol 31 (Part 2, No. 9B) ◽

pp. L1319-L1321 ◽

Cited By ~ 26

Author(s):

Susumu Fukatsu ◽

Hironobu Yoshida ◽

Noritaka Usami ◽

Akira Fujiwara ◽

Yutaka Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Size Effect ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Gas Source ◽

Quantum Size ◽

Band Edge Luminescence

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