Fabrication of SOI CMOS over large-area continuous-oxide films formed using epitaxial lateral overgrowth techniques

1988 ◽  
Vol 35 (12) ◽  
pp. 2437
Author(s):  
G. Dolny ◽  
A. Ipri ◽  
L. Jastrzebski ◽  
D. Flatley
Keyword(s):  
Oxide Films ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
Lateral Overgrowth ◽  
Soi Cmos

Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

1999 ◽  
Vol 572 ◽  
Author(s):  
Patrick J. Mcnally ◽  
T. Tuomi ◽  
R. Rantamaki ◽  
K. Jacobs ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Well ◽  
Sapphire Substrate ◽  
Large Scale ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Transmission Modes ◽  
Multi Quantum Well

ABSTRACTSynchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.

Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth

1999 ◽  
Vol 587 ◽  
Author(s):  
M. Mynbaeva ◽  
N. Savkina ◽  
A. Zubrilov ◽  
N. Seredova ◽  
M. Scheglov ◽  
...  
Keyword(s):  
Stress Reduction ◽  
Defect Density ◽  
Deep Level ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
High Quality ◽  
Density Reduction ◽  
Lateral Overgrowth ◽  
Sublimation Method ◽  
Porous Sic

AbstractThe main unsolved problem in SiC technology is a high density of defects in substrate materials (micropipes and dislocations) propagating into device structures and causing device failure. Recently, significant progress in defect density reduction in semiconductor materials has been achieved using epitaxial lateral overgrowth techniques. In this paper, we describe a novel technique, which shows a high potential for defect reduction in epitaxial and bulk SiC. This technique is based on nano-scale epitaxial lateral overgrowth (NELOG) method, which employs porous substrate materials. Usually, the pores are from 50 to 500 nm in size and epitaxial material overgrowing these pores, forms continues high-quality layer. It is important that the NELOG method does not require any mask. This technique may be easily scaled for large area substrates.In this work, SiC layers were grown on porous SiC by sublimation method, which is widely used for both epitaxial and bulk SiC growth. Porous SiC substrates were formed by surface anodization of SiC commercial wafers. It was shown that SiC layers grown on porous SiC substrates have smooth surface and high crystal quality. The surface of overgrown material was uniform and flat without any traces of porous structure. X-ray topography indicated significant defect density and stress reduction in SiC grown on porous material. Photoluminescence measurements showed a reduction of deep level recombination in SiC.

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

CrystEngComm ◽  
2012 ◽  
Vol 14 (17) ◽  
pp. 5558 ◽  
Author(s):  
Bo-Ra Yeom ◽  
R. Navamathavan ◽  
Ji-Hyeon Park ◽  
Yong-Ho Ra ◽  
Cheul-Ro Lee
Keyword(s):  
Growth Behavior ◽  
Epitaxial Lateral Overgrowth ◽  
Gan Nanowires ◽  
Lateral Overgrowth
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