Large area silicon on insulator by double-merged epitaxial lateral overgrowth

1992 ◽  
Vol 10 (2) ◽  
pp. 643 ◽  
Author(s):  
Chitra K. Subramanian
Keyword(s):  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
Lateral Overgrowth

Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

1999 ◽  
Vol 572 ◽  
Author(s):  
Patrick J. Mcnally ◽  
T. Tuomi ◽  
R. Rantamaki ◽  
K. Jacobs ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Well ◽  
Sapphire Substrate ◽  
Large Scale ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Transmission Modes ◽  
Multi Quantum Well

ABSTRACTSynchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.

Seam line defects in silicon‐on‐insulator by merged epitaxial lateral overgrowth

1994 ◽  
Vol 65 (13) ◽  
pp. 1638-1640 ◽  
Author(s):  
Yang‐Chin Shih ◽  
Jen‐Chung Lou ◽  
William G. Oldham
Keyword(s):  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Line Defects

The Study of Seam Line Defects in Silicon-On-Oxide by Merged Epitaxial Lateral Overgrowth

1993 ◽  
Vol 317 ◽  
Author(s):  
Yangchin Shih ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Formation Mechanisms ◽  
Crystal Silicon ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Line Defects

ABSTRACTSelective Epitaxial Growth of silicon through windows in SiO2 using low-temperature SiH2Cl2/H2 chemistry in a hot wall LPCVD system was used to form Epitaxial Lateral Overgrowth (ELO) regions of Silicon-on-insulator. In cases where pattern ‘width was less than two times epi film thickness, the ELO regions merged to form a continuous epitaxial film. In this study, 2.5 μm thick single crystal silicon layers were grown perfectly over oxide regions with very low dislocation density (< 104/cm2). The epitaxial Si/oxide interfaces were smooth and defect-free. However, a “seam”-like defect was occasionally observed in the epitaxial film on top of the oxide, at the locations where two growth fronts merged together. This crystallographic defect in some case extends through the whole Silicon-on-Oxide film and would be expected to be detrimental to electronic devices built on or close to it. The sturctures of these seam line defects were investigated in detail by transmission electron Microscopy (TEM). The formation mechanisms of these seam line defects and possible origins are discussed.

Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth

1999 ◽  
Vol 587 ◽  
Author(s):  
M. Mynbaeva ◽  
N. Savkina ◽  
A. Zubrilov ◽  
N. Seredova ◽  
M. Scheglov ◽  
...  
Keyword(s):  
Stress Reduction ◽  
Defect Density ◽  
Deep Level ◽  
Epitaxial Lateral Overgrowth ◽  
Large Area ◽  
High Quality ◽  
Density Reduction ◽  
Lateral Overgrowth ◽  
Sublimation Method ◽  
Porous Sic

AbstractThe main unsolved problem in SiC technology is a high density of defects in substrate materials (micropipes and dislocations) propagating into device structures and causing device failure. Recently, significant progress in defect density reduction in semiconductor materials has been achieved using epitaxial lateral overgrowth techniques. In this paper, we describe a novel technique, which shows a high potential for defect reduction in epitaxial and bulk SiC. This technique is based on nano-scale epitaxial lateral overgrowth (NELOG) method, which employs porous substrate materials. Usually, the pores are from 50 to 500 nm in size and epitaxial material overgrowing these pores, forms continues high-quality layer. It is important that the NELOG method does not require any mask. This technique may be easily scaled for large area substrates.In this work, SiC layers were grown on porous SiC by sublimation method, which is widely used for both epitaxial and bulk SiC growth. Porous SiC substrates were formed by surface anodization of SiC commercial wafers. It was shown that SiC layers grown on porous SiC substrates have smooth surface and high crystal quality. The surface of overgrown material was uniform and flat without any traces of porous structure. X-ray topography indicated significant defect density and stress reduction in SiC grown on porous material. Photoluminescence measurements showed a reduction of deep level recombination in SiC.

SOI Interface Structures in Selective Epitaxial Growth

1991 ◽  
Vol 238 ◽  
Author(s):  
Zara S. Weng ◽  
R. Gronsky ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Growth ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Structural Defects ◽  
Selective Epitaxial Growth ◽  
Lateral Overgrowth ◽  
Silicon Growth ◽  
Interface Structures ◽  
Oxygen Fluorine

ABSTRACTSilicon-on-insulator structures were formed by the selective epitaxial growth (SEG) of silicon and the epitaxial lateral overgrowth (ELO) of oxide shapes using an LPCVD hot-walled reactor at 850°C. The homoepitaxial interface changed character with modifications of the gas composition during the in-situ pre-epitaxial bake at 900°C. HREM images show ellipsoid-shaped inclusions lying along the homoepitaxial interface for silicon growth conducted with no dichlorosilane (DCS) flow during the prebake in H2. SIMS analysis indicates a large oxygen, fluorine, and carbon concentration at the interface. For structures grown with a small DCS flow in addition to H2 during the prebake, the homoepitaxial structural defects and the oxygen, fluorine, and carbon peaks are removed.

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

2009 ◽  
Vol 23 (15) ◽  
pp. 1881-1887 ◽  
Author(s):  
BO ZHANG ◽  
JING CHEN ◽  
XI WANG ◽  
AIMIN WU ◽  
JIEXIN LUO ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Micro Raman Spectroscopy ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Single Process ◽  
Soi Substrates

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystalline quality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

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