A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

2000 ◽  
Vol 47 (11) ◽  
pp. 2161-2166 ◽  
Author(s):  
Kuo-Nan Yang ◽  
Huan-Tsung Huang ◽  
Ming-Chin Chang ◽  
Che-Min Chu ◽  
Yuh-Shu Chen ◽  
...  
Keyword(s):  
Physical Model ◽  
Tunneling Current ◽  
Gate Oxides ◽  
Direct Tunneling ◽  
Direct Tunneling Current

1/f Noise in the Tunneling Current of thin Gate Oxides

1996 ◽  
Vol 428 ◽  
Author(s):  
G. B. Alers ◽  
D. Monroe ◽  
K. S. Krisch ◽  
B. E. Weir ◽  
A. M. Chang
Keyword(s):  
Power Spectrum ◽  
Tunneling Current ◽  
Current Noise ◽  
Simplified Model ◽  
Gate Oxides ◽  
Current Dependence ◽  
Direct Tunneling ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Direct Tunneling Current

AbstractWe have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we lind an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.

Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

2019 ◽  
Vol 6 (4) ◽  
pp. 165-170 ◽  
Author(s):  
Georges Guegan ◽  
Jeremy Pretet ◽  
Romain Gwoziecki ◽  
Olivier Gonnard ◽  
Gilles Gouget ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Tunneling Current ◽  
Device Performance ◽  
Direct Tunneling ◽  
Direct Tunneling Current
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