SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

1991 ◽  
Vol 38 (5) ◽  
pp. 1141-1144 ◽  
Author(s):  
T.-L. Lin ◽  
A. Ksendzov ◽  
S.M. Dejewski ◽  
E.W. Jones ◽  
R.W. Fathaure ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

SiGe/Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors

1990 ◽  
Vol 216 ◽  
Author(s):  
T. L. Lin ◽  
A. Ksendzov ◽  
S. M. Dejewski ◽  
E. W. Jones ◽  
R. W. Fathauer ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Molecular Beam ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Indium Bump ◽  
Good Uniformity ◽  
Easy Integration ◽  
Long Wavelength Infrared

There is a great need of long-wavelength (8-17μm) infrared (LWIR) focal plane arrays (FPAs) for a variety of space and defense applications. Si-based infrared detectors offers several important advantages, including good uniformity, low cost, and easy integration with Si readout circuitry either monolithically or by indium bump bonding to form large arrays. We report here a novel SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector fabricated by molecular beam epitaxy [1].

Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

2002 ◽  
Vol 31 (7) ◽  
pp. 710-714 ◽  
Author(s):  
R. Haakenaasen ◽  
H. Steen ◽  
T. Lorentzen ◽  
L. Trosdahl-Iversen ◽  
A. D. Van Rheenen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

2005 ◽  
Vol 34 (6) ◽  
pp. 832-838 ◽  
Author(s):  
M. Carmody ◽  
J. G. Pasko ◽  
D. Edwall ◽  
R. Bailey ◽  
J. Arias ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Detector Performance ◽  
Long Wavelength ◽  
Long Wavelength Infrared
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