SiGe/Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors
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Low Cost
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There is a great need of long-wavelength (8-17μm) infrared (LWIR) focal plane arrays (FPAs) for a variety of space and defense applications. Si-based infrared detectors offers several important advantages, including good uniformity, low cost, and easy integration with Si readout circuitry either monolithically or by indium bump bonding to form large arrays. We report here a novel SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector fabricated by molecular beam epitaxy [1].
1991 ◽
Vol 38
(5)
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pp. 1141-1144
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2019 ◽
Vol 96
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pp. 251-261
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2004 ◽
Vol 33
(6)
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pp. 526-530
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2002 ◽
Vol 31
(7)
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pp. 710-714
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2005 ◽
Vol 20
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pp. 473-480
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