Annealing studies of heteroepitaxial InSbN on GaAs grown by molecular beam epitaxy for long-wavelength infrared detectors
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1991 ◽
Vol 38
(5)
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pp. 1141-1144
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2002 ◽
Vol 31
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pp. 710-714
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1999 ◽
2005 ◽
Vol 34
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pp. 832-838
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2015 ◽
Vol 425
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pp. 25-28
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2014 ◽
2013 ◽
Vol 49
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pp. 485-491
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Vol 33
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pp. 531-537
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