High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

S.S. Lu; C.C. Huang

doi:10.1109/55.145025

High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.145025 ◽

1992 ◽

Vol 13 (4) ◽

pp. 214-216 ◽

Cited By ~ 61

Author(s):

S.S. Lu ◽

C.C. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Gas Source

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High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy

Solid-State Electronics ◽

10.1016/0038-1101(93)90139-h ◽

1993 ◽

Vol 36 (2) ◽

pp. 197-200 ◽

Cited By ~ 3

Author(s):

Chen-Chih Huang ◽

Hao-Hsiung Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current

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Growth of carbon doping Ga[sub 0.47]In[sub 0.53]As using CBr[sub 4] by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590720 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1185 ◽

Cited By ~ 6

Author(s):

H. C. Kuo ◽

D. Ahmari ◽

B. G. Moser ◽

J. Mu ◽

M. Hattendorf ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doping ◽

Gas Source

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In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.057 ◽

2005 ◽

Vol 273 (3-4) ◽

pp. 381-385 ◽

Cited By ~ 2

Author(s):

F. Gao ◽

D.D. Huang ◽

J.P. Li ◽

C. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Doping Control ◽

Heterojunction Bipolar Transistor ◽

Gas Source

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High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80145-3 ◽

1995 ◽

Vol 150 ◽

pp. 1281-1286 ◽

Cited By ~ 5

Author(s):

H. Ando ◽

N. Okamoto ◽

S. Yamaura ◽

T. Tomioka ◽

T. Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Molecular Beam Epitaxy System ◽

Gas Source

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High-current-gain small-offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.192797 ◽

1992 ◽

Vol 13 (9) ◽

pp. 468-470 ◽

Cited By ~ 6

Author(s):

Shey-Shi Lu ◽

Chung-Cheng Wu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gas Source ◽

Offset Voltage

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l309 ◽

1993 ◽

Vol 32 (Part 2, No. 3A) ◽

pp. L309-L311 ◽

Cited By ~ 7

Author(s):

Shinji Yamaura ◽

Hideyasu Ando ◽

Naoya Okamoto ◽

Adarsh Sandhu ◽

Tsuyoshi Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Carbon Doped ◽

Gas Source ◽

Trimethylamine Alane

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The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00857-5 ◽

2000 ◽

Vol 220 (4) ◽

pp. 457-460

Author(s):

F Gao ◽

D.D Huang ◽

J.P Li ◽

Y.X Lin ◽

M.Y Kong ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Source

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High Current Gain In 0.49 Ga 0.51 P/GaAs Heterojunction Bipolar Transistors with Double Spacers Grown by Gas Source Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/17/12/021 ◽

2000 ◽

Vol 17 (12) ◽

pp. 915-917 ◽

Cited By ~ 1

Author(s):

Chen Xiao-Jie ◽

Chen Jian-Xin ◽

Chen Yi-Qiao ◽

Peng Peng ◽

Yang Quan-Kui ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gas Source

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Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.102863 ◽

1990 ◽

Vol 56 (26) ◽

pp. 2645-2647 ◽

Cited By ~ 21

Author(s):

Hiroyuki Hirayama ◽

Masayuki Hiroi ◽

Kazuhisa Koyama ◽

Toru Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Source ◽

Transistor Fabrication

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Early effect of high-current-gain heterojunction bipolar transistor

Electronics Letters ◽

10.1049/el:19860846 ◽

1986 ◽

Vol 22 (23) ◽

pp. 1234 ◽

Cited By ~ 2

Author(s):

H. Wang ◽

J. Dangla

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Early Effect

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