Correlation between current-voltage and capacitance-voltage characteristics of Schottky barrier diodes

1998 ◽  
Vol 45 (9) ◽  
pp. 2032-2036 ◽  
Author(s):  
Y. Zhu ◽  
Y. Ishimaru ◽  
N. Takahashi ◽  
M. Shimizu
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Capacitance Voltage

Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

2013 ◽  
Vol 43 (1-2) ◽  
pp. 13-21 ◽  
Author(s):  
Y. Munikrishana Reddy ◽  
M. K. Nagaraj ◽  
M. Siva Pratap Reddy ◽  
Jung-Hee Lee ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Silicon ◽  
2018 ◽  
Vol 11 (6) ◽  
pp. 2647-2657 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Rukiye Aldemir ◽  
Ali Kökce ◽  
Songül Duman ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Thermal Neutron ◽  
Schottky Barrier ◽  
Neutron Irradiation ◽  
Schottky Barrier Diodes ◽  
Thermal Neutron Irradiation ◽  
Current Voltage ◽  
Capacitance Voltage

Statistical Analysis of the Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

2018 ◽  
Vol 24 (8) ◽  
pp. 5582-5586
Author(s):  
R Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electron Beam Evaporation ◽  
Statistical Distribution ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
The Mean

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Φb) and donar concentration (Nd) values are determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS) and shunt resistance (RSh) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm−3, with a normal deviation of 0.018 × 1017 cm−3 respectively.

4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

2009 ◽  
Vol 615-617 ◽  
pp. 647-650 ◽  
Author(s):  
Denis Perrone ◽  
Marco Naretto ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
C. Fabrizio Pirri
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Power Losses ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Thermal Annealing Process ◽  
Power Densities

We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and power densities for long periods of time, and showing low power losses. The control of the Schottky barrier plays an important role in minimizing the power loss of a SBD, and the metal-semiconductor interface properties strongly affect the overall performances of such a device. Schottky contacts were deposited using Ni, Ti, Ti/Al, Mo and Mo/Al layers, and the annealing treatments have been performed up to 600 °C using a rapid thermal annealing process (RTA). Ohmic contacts have been deposited on the wafer backside using Ti/Al or Ti/Ni/Ag layers. The Schottky diodes have been characterized by means of standard current-voltage (I-V) and capacitance-voltage (C-V) techniques. Schottky diodes with Mo and Mo/Al barriers show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts.

Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕n-Si and Sn/rhodamine-101∕p-Si Schottky barrier diodes

2006 ◽  
Vol 100 (7) ◽  
pp. 074505 ◽  
Author(s):  
Muzaffer Çakar ◽  
Nezir Yıldırım ◽  
Şukru Karataş ◽  
Cabir Temirci ◽  
Abdulmecit Türüt
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rhodamine 101

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

2019 ◽  
Vol 58 (1) ◽  
pp. 014002 ◽  
Author(s):  
Kamal Zeghdar ◽  
Lakhdar Dehimi ◽  
Fortunato Pezzimenti ◽  
Sandro Rao ◽  
Francesco G. Della Corte
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Characteristics ◽  
Current Voltage
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