Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

2016 ◽  
Vol 108 (13) ◽  
pp. 133503 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Keita Konishi ◽  
Kohei Sasaki ◽  
Ken Goto ◽  
Kazushiro Nomura ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

2015 ◽  
Vol 650 ◽  
pp. 658-663 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Min-Sung Kang ◽  
Kyu-Hwan Shim ◽  
Hyung-Joong Yun ◽  
Jouhan Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

2013 ◽  
Vol 43 (1-2) ◽  
pp. 13-21 ◽  
Author(s):  
Y. Munikrishana Reddy ◽  
M. K. Nagaraj ◽  
M. Siva Pratap Reddy ◽  
Jung-Hee Lee ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission

2019 ◽  
Vol 954 ◽  
pp. 126-132
Author(s):  
Tao Fei Pu ◽  
Xiao Bo Li ◽  
Xiao Wang ◽  
Yu Yu Bu ◽  
Liu An Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Microwave Power ◽  
Power Transmission ◽  
Temperature Stability ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Anode Area ◽  
Tin Anode

In this study, TiN anode GaN Schottky barrier diodes (SBDs) with a low access sheet resistance of 28 Ω/□ were fabricated for microwave power transmission application. The performance of the diodes at room temperature (RT) is comparable with the ideality factor n and Schottky barrier height (SBH) were 1.28 and 0.47 eV for the 8-finger SBDs, 1.22 and 0.49 eV for the 16-finger SBDs, respectively. A low on-resistance of 5.71 and 3.58 Ω were obtained for 8-and 16-finger SBD at RT, respectively. The low series resistance induced by larger anode area of 16-finger SBDs results in a lower turn-on voltage of 0.47 V compared with that of 0.68 V for the 8-finger one. Besides, the temperature dependent current-voltage characteristics demonstrate that the TiN anode has a good temperature stability. And the temperature dependent performance of the 16-finger SBDs present a better uniformity than that of the 8-finger SBDs.

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