Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing

1997 ◽  
Vol 44 (9) ◽  
pp. 1467-1472 ◽  
Author(s):  
T. Ushiki ◽  
Mo-Chiun Yu ◽  
Y. Hirano ◽  
H. Shimada ◽  
M. Morita ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Low Temperature Processing

scholarly journals Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Avi Karsenty ◽  
Avraham Chelly
Keyword(s):  
Low Temperature ◽  
Potential Barrier ◽  
Room Temperature ◽  
Short Channel ◽  
Anomalous Effect ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Thickness ◽  
Recessed Channel ◽  
Long Channel

Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) forI-Vcharacterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

scholarly journals Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Comparative Analysis ◽  
Low Temperature ◽  
Room Temperature ◽  
Series Resistance ◽  
Function Analysis ◽  
Saturation Regime ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Recessed Channel ◽  
First Time

The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the sameW/Lratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDSandIDS-VGS) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using aY-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of theY-function analysis and show that a new function calledZcan be used to extract the series resistance in the saturation regime.

Changes in color characteristics of culinary products from turkey meat produced with the use of low-temperature heat treatment

Vsyo o myase ◽  
2020 ◽  
pp. 22-24
Author(s):  
Nasonova V.V. ◽  
◽  
Tunieva E.K. ◽  
Motovilina A.A. ◽  
Mileenkova E.V. ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Low Temperature ◽  
Production Technology ◽  
Meat Products ◽  
Oxidation Products ◽  
Turkey Meat ◽  
Color Characteristics ◽  
Low Temperature Processing ◽  
Temperature Heat ◽  
Temperature Heat Treatment

The paper presents the results of the study on the effect of low-temperature heat treatment on color characteristics and protein oxidation products depending on the method, temperature and duration of heat treatment of culinary products from turkey meat. At present, the use of low-temperature processing in the production technology for meat products with improved organoleptic indices is a topical direction.

scholarly journals Low-Temperature Processing of Dense HydroxyapatiteZirconia Composites

2008 ◽  
Vol 5 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Yougojoti Nayak ◽  
Raghunath Rana ◽  
Swadesh Pratihar ◽  
Santanu Bhattacharyya
Keyword(s):  
Low Temperature ◽  
Low Temperature Processing

Oxide nanopowders from the low-temperature processing of metal oxide sols and their application as gas-sensing materials

2006 ◽  
Vol 118 (1-2) ◽  
pp. 105-109 ◽  
Author(s):  
Mauro Epifani ◽  
Elisabetta Comini ◽  
Raül Díaz ◽  
Jordi Arbiol ◽  
Pietro Siciliano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Gas Sensing ◽  
Low Temperature Processing

scholarly journals Rapid and low temperature processing of mesoporous TiO2 for perovskite solar cells on flexible and rigid substrates

2017 ◽  
Vol 13 ◽  
pp. 232-240 ◽  
Author(s):  
Benjamin Feleki ◽  
Guy Bex ◽  
Ronn Andriessen ◽  
Yulia Galagan ◽  
Francesco Di Giacomo
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Perovskite Solar Cells ◽  
Mesoporous Tio2 ◽  
Low Temperature Processing
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