Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs

1996 ◽  
Vol 43 (4) ◽  
pp. 605-612 ◽  
Author(s):  
S. Okhonin ◽  
T. Hessler ◽  
M. Dutoit
Keyword(s):  
Interface Trap ◽  
Charge Pumping

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

1991 ◽  
Vol 38 (8) ◽  
pp. 1820-1831 ◽  
Author(s):  
G. Van den bosch ◽  
G.V. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Interface Trap ◽  
Mos Transistors ◽  
Charge Pumping

scholarly journals A high-sensitive digital photosensor using MOS interface-trap charge pumping

2004 ◽  
Vol 1 (18) ◽  
pp. 556-561
Author(s):  
Akihiro Uehara ◽  
Keiichiro Kagawa ◽  
Takashi Tokuda ◽  
Jun Ohta ◽  
Masahiro Nunoshita
Keyword(s):  
Interface Trap ◽  
Trap Charge ◽  
Charge Pumping

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

1999 ◽  
Vol 592 ◽  
Author(s):  
J.L. Autran ◽  
P. Masson ◽  
G. Ghibaudo
Keyword(s):  
Time Domain ◽  
Electrical Characterization ◽  
Time Domain Analysis ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Behavior ◽  
Charge Pumping ◽  
Mos Devices ◽  
Technological Treatments

ABSTRACTThis work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.

Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

2012 ◽  
Vol 59 (6) ◽  
pp. 3062-3068 ◽  
Author(s):  
E. X. Zhang ◽  
D. M. Fleetwood ◽  
G. X. Duan ◽  
C. X. Zhang ◽  
S. A. Francis ◽  
...  
Keyword(s):  
Trap Density ◽  
Floating Body ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Charge Pumping ◽  
Radiation Induced
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