The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors

1989 ◽  
Vol 36 (9) ◽  
pp. 1703-1710 ◽  
Author(s):  
D.D.-L. Tang ◽  
T.-C. Chen ◽  
C.T. Chuang ◽  
J.D. Cressler ◽  
J. Warnock ◽  
...  
Keyword(s):  
High Performance ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Ion Implanted

Design considerations of high-performance narrow-emitter bipolar transistors

1987 ◽  
Vol 8 (4) ◽  
pp. 174-175 ◽  
Author(s):  
D.D. Tang ◽  
Tze-Chiang Chen ◽  
Ching-Te Chuang ◽  
G.P. Li ◽  
J.M.C. Stork ◽  
...  
Keyword(s):  
High Performance ◽  
Bipolar Transistors ◽  
Design Considerations

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

High performance wafer scale flexible InP double heterogeneous bipolar transistors

2021 ◽  
Vol 36 (3) ◽  
pp. 03LT02
Author(s):  
LiShu Wu ◽  
JiaYun Dai ◽  
Yuan Wang ◽  
YueChan Kong ◽  
TangSheng Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Bipolar Transistors ◽  
Wafer Scale

InAs bipolar transistors: a path to high-performance cryogenic electronics

2005 ◽  
Author(s):  
P.E. Dodd ◽  
M.R. Melloch ◽  
M.S. Lundstrom ◽  
J.M. Woodall ◽  
D. Pettit
Keyword(s):  
High Performance ◽  
Bipolar Transistors ◽  
Cryogenic Electronics

Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

2009 ◽  
Vol 94 (1) ◽  
pp. 013308 ◽  
Author(s):  
Samarendra P. Singh ◽  
Prashant Sonar ◽  
Alan Sellinger ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure
Sign in / Sign up

Export Citation Format

Share Document